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2013 IEEE International Conference of Electron Devices and Solid-state Circuits
Latest Publications
TOTAL DOCUMENTS
211
(FIVE YEARS 0)
H-INDEX
5
(FIVE YEARS 0)
Published By IEEE
9781467325233
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
High-field transport in graphene and carbon nanotubes
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628176
◽
2013
◽
Cited By ~ 2
Author(s):
Vijay K. Arora
◽
Michael L. P. Tan
Keyword(s):
Carbon Nanotubes
◽
High Field
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Power- & area-efficiency enhancement techniques of switched-capacitor power converters for low-power applications
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628143
◽
2013
◽
Author(s):
Hoi Lee
◽
Zhe Hua
Keyword(s):
Low Power
◽
Power Converters
◽
Switched Capacitor
◽
Efficiency Enhancement
◽
Area Efficiency
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Modeling of an inductive link for wireless power applications
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628105
◽
2013
◽
Author(s):
Salahuddin Raju
◽
Mansun Chan
◽
C. Patrick Yue
Keyword(s):
Wireless Power
◽
Inductive Link
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S band broadband RF LDMOS with excellent performance
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628078
◽
2013
◽
Author(s):
Ting Yu
◽
Zhiqing Qiu
Keyword(s):
Excellent Performance
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The reliability of SiGe HBT under swift heavy ion irradiation
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628148
◽
2013
◽
Author(s):
Yabin Sun
◽
Jun Fu
◽
Jun Xu
◽
Yudong Wang
◽
Wei Zhou
◽
...
Keyword(s):
Ion Irradiation
◽
Heavy Ion
◽
Swift Heavy Ion Irradiation
◽
Sige Hbt
◽
Heavy Ion Irradiation
◽
Swift Heavy Ion
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SiC device technology for energy efficiency and high temperature operation
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628179
◽
2013
◽
Author(s):
Mikael Ostling
Keyword(s):
Energy Efficiency
◽
High Temperature
◽
High Temperature Operation
◽
Device Technology
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Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628081
◽
2013
◽
Author(s):
Wen-Kuan Yeh
◽
Chun-Ming Lai
◽
Li-Kong Chin
◽
Po-Ying Chen
Keyword(s):
Thin Body
◽
Reliability Check
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Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628190
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2013
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Author(s):
R. P. Shi
◽
X. D. Huang
◽
C.H. Leung
◽
P. T. Lai
Keyword(s):
Nonvolatile Memory
◽
Charge Trapping
◽
Niobium Doped
◽
Memory Applications
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A fast frequency acquisition phase-locked loop using phase compensation techniques
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628038
◽
2013
◽
Cited By ~ 1
Author(s):
Feng-Lin Chiu
◽
Steve Hung-Lung Tu
Keyword(s):
Phase Locked Loop
◽
Acquisition Phase
◽
Phase Compensation
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An ultra-low power CMOS smart temperature sensor for clinical temperature monitoring
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
◽
10.1109/edssc.2013.6628063
◽
2013
◽
Cited By ~ 1
Author(s):
Tao Wu
◽
Man-Kay Law
◽
Pui-In Mak
◽
Rui P. Martins
Keyword(s):
Low Power
◽
Temperature Sensor
◽
Temperature Monitoring
◽
Ultra Low Power
◽
Low Power Cmos
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