Analytical modeling of reservoir effect on electromigration in Cu interconnects
2007 ◽
Vol 22
(1)
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pp. 152-156
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Keyword(s):
Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.
2021 ◽
Vol 48
(4)
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pp. 53-61
1975 ◽
Vol 5
(8)
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pp. 1637-1648
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2014 ◽
Vol 43
(11)
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pp. 1523-1540
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Keyword(s):
2001 ◽
Vol 67
(8)
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pp. 3440-3444
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Keyword(s):
2006 ◽
Vol 72
(4)
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pp. 2385-2389
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1990 ◽
Vol 45
(6)
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pp. 864-870
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Keyword(s):
2002 ◽
Vol 49
(11)
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pp. 1928-1938
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