Suppression of excess noise in polarization enhanced back illuminated AlGaN solar-blind SAM APDs with modified multiplication layer

2017 ◽  
Author(s):  
Muhammad Navid Anjum Aadit ◽  
Shamima Nasrin Juthi ◽  
Ummay Sumaya Khan
Keyword(s):  
Excess Noise ◽  
Solar Blind ◽  
Back Illuminated

Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes

2002 ◽  
Vol 38 (15) ◽  
pp. 824 ◽  
Author(s):  
C.J. Collins ◽  
U. Chowdhury ◽  
M.M. Wong ◽  
B. Yang ◽  
A.L. Beck ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Pin Photodiodes ◽  
Back Illuminated

Back-illuminated solar-blind AlxGa1-xN p-i-n photodiodes

2002 ◽  
Author(s):  
J. C. Campbell ◽  
Chris J. Collins ◽  
M. M. Wong ◽  
U. Chowdhury ◽  
Russell D. Dupuis
Keyword(s):  
Solar Blind ◽  
Back Illuminated

AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Lamarre ◽  
A. Hairston ◽  
S. Tobin ◽  
K. K. Wong ◽  
M. F. Taylor ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Dark Current ◽  
Current Data ◽  
Conduction Model ◽  
Zero Bias ◽  
Imaging Results ◽  
Solar Blind ◽  
Uv Response ◽  
Full Depletion ◽  
Back Illuminated

ABSTRACTThis paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.

Back-Illuminated GaN/AlGaN Solar-Blind Avalanche Photodiodes

2015 ◽  
Vol 27 (3) ◽  
pp. 272-275 ◽  
Author(s):  
Ke Xiu Dong ◽  
Jun Wang ◽  
Yan Yi Zhang ◽  
Xue Cai Cheng ◽  
Mei Ying Ou
Keyword(s):  
Avalanche Photodiodes ◽  
Solar Blind ◽  
Back Illuminated

Back illuminated solar-blind photodetectors

2002 ◽  
Author(s):  
C.J. Collins ◽  
T. Li ◽  
D.J. Lambert ◽  
M.M. Wong ◽  
B. Yang ◽  
...  
Keyword(s):  
Solar Blind ◽  
Back Illuminated

High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes

2018 ◽  
Vol 29 (11) ◽  
pp. 9077-9082 ◽  
Author(s):  
W. Y. Han ◽  
Z. W. Zhang ◽  
Z. M. Li ◽  
Y. R. Chen ◽  
H. Song ◽  
...  
Keyword(s):  
High Performance ◽  
Mis Structure ◽  
Solar Blind ◽  
Back Illuminated

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

2013 ◽  
Vol 103 (19) ◽  
pp. 191108 ◽  
Author(s):  
E. Cicek ◽  
R. McClintock ◽  
C. Y. Cho ◽  
B. Rahnema ◽  
M. Razeghi
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Back Illuminated

The fabrication of a 128×128 solar-blind AlGaN p-i-n back-illuminated ultraviolet photodetector array

2009 ◽  
Author(s):  
Tingjing Yan ◽  
Ming Chong ◽  
Degang Zhao ◽  
Shuang Zhang ◽  
Lianghui Chen
Keyword(s):  
Ultraviolet Photodetector ◽  
Photodetector Array ◽  
Solar Blind ◽  
Back Illuminated
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