High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes

The optimized growth of AlN templates via a mesothermal AlN interlayer method for high performance back-illuminated AlGaN-based solar-blind ultraviolet photodetectors is shown.

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High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors

Electronics Letters ◽

10.1049/el:20001301 ◽

2000 ◽

Vol 36 (22) ◽

pp. 1866 ◽

Cited By ~ 24

Author(s):

B. Yang ◽

D.J.H. Lambert ◽

T. Li ◽

C.J. Collins ◽

M.M. Wong ◽

...

Keyword(s):

High Performance ◽

Metal Semiconductor Metal ◽

Solar Blind ◽

Back Illuminated

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High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

IEEE Electron Device Letters ◽

10.1109/led.2021.3061509 ◽

2021 ◽

Vol 42 (4) ◽

pp. 545-548

Author(s):

Zhe Li ◽

Zhaoqing Feng ◽

Yu Xu ◽

Qian Feng ◽

Weidong Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solar Blind

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High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

phys stat sol (a) ◽

10.1002/1521-396x(200111)188:1<325::aid-pssa325>3.0.co;2-t ◽

2001 ◽

Vol 188 (1) ◽

pp. 325-328 ◽

Cited By ~ 8

Author(s):

J.-Y. Duboz ◽

J.-L. Reverchon ◽

D. Adam ◽

B. Damilano ◽

F. Semond ◽

...

Keyword(s):

High Performance ◽

Solar Blind

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High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110402 ◽

2021 ◽

pp. 110402

Author(s):

Yongjian Ma ◽

Boyuan Feng ◽

Xiaodong Zhang ◽

Tiwei Chen ◽

Wenbo Tang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Performance ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Solar Blind ◽

Ultraviolet Photodetectors ◽

Metalorganic Chemical

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The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽

10.3390/electronics10050631 ◽

2021 ◽

Vol 10 (5) ◽

pp. 631

Author(s):

Wei-Lun Huang ◽

Sheng-Po Chang ◽

Cheng-Hao Li ◽

Shoou-Jinn Chang

Keyword(s):

Zinc Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Wide Bandgap ◽

Visible Light Region ◽

Current Ratio ◽

Rejection Ratio ◽

Light Region ◽

Sputtering Power ◽

Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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