Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes

2002 ◽  
Vol 38 (15) ◽  
pp. 824 ◽  
Author(s):  
C.J. Collins ◽  
U. Chowdhury ◽  
M.M. Wong ◽  
B. Yang ◽  
A.L. Beck ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Pin Photodiodes ◽  
Back Illuminated

AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

2013 ◽  
Vol 103 (19) ◽  
pp. 191108 ◽  
Author(s):  
E. Cicek ◽  
R. McClintock ◽  
C. Y. Cho ◽  
B. Rahnema ◽  
M. Razeghi
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Back Illuminated

Polarization-Graded AlGaN Solar-Blind p-i-n Detector With 92% Zero-Bias External Quantum Efficiency

2019 ◽  
Vol 31 (15) ◽  
pp. 1237-1240 ◽  
Author(s):  
Anisha Kalra ◽  
Shashwat Rathkanthiwar ◽  
Rangarajan Muralidharan ◽  
Srinivasan Raghavan ◽  
Digbijoy N. Nath
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Zero Bias ◽  
Solar Blind

High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 693 ◽  
Author(s):  
U. Chowdhury ◽  
M. M. Wong ◽  
C. J. Collins ◽  
B. Yang ◽  
T. G. Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Wavelength Range ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quantum Efficiency ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Back Illuminated

AbstractWe report the growth, fabrication and characterization of back-illuminated AlGaN p-i-n photodetectors operating in the solar-blind wavelength range. A peak external quantum efficiency (EQE) of 45.5% (0.1A/W) was obtained at a wavelength of 270 nm. This EQE was obtained at zero volt bias and without the use of any anti-reflection coating on the back of the substrate. To our knowledge, this is the highest EQE reported to date for p-i-n photodetectors operating in the solar-blind wavelength range.

Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

2020 ◽  
Vol 8 (15) ◽  
pp. 5071-5081 ◽  
Author(s):  
Zeng Liu ◽  
Shan Li ◽  
Zuyong Yan ◽  
Yuanyuan Liu ◽  
Yusong Zhi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Blind Detection ◽  
Dual Mode ◽  
Zero Bias ◽  
Solar Blind

A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.

scholarly journals High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p—i—n Photodetectors

2012 ◽  
Vol 29 (9) ◽  
pp. 097302 ◽  
Author(s):  
Guo-Sheng Wang ◽  
Hai Lu ◽  
Feng Xie ◽  
Dun-Jun Chen ◽  
Fang-Fang Ren ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Solar Blind ◽  
Back Illuminated

Solar‐blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V

2015 ◽  
Vol 51 (20) ◽  
pp. 1598-1600 ◽  
Author(s):  
M. Brendel ◽  
M. Helbling ◽  
A. Knigge ◽  
F. Brunner ◽  
M. Weyers
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Solar Blind ◽  
Msm Photodetectors

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency
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