A low-power, low-noise neural-signal amplifier circuit in 90-nm CMOS

Author(s):  
M. H. Zarifi ◽  
J. Frounchi ◽  
S. Farshchi ◽  
J. W. Judy
Author(s):  
M. SANTHANALAKSHMI ◽  
J. ALEXANDER ◽  
P.T. VANATHI ◽  
M. RENUGA

This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce the power consumption. Low frequency high pass function has been realized with anti-parallel Diode connected PMOS. Simulation results shows that the input referred noise is 1.24μVrms from 100Hz to 5 KHz, mid-band voltage gain of 44.6dB, and the power consumption is 18.74μw. A new signal processing circuit has been designed extract the seizure onset. The results are validated using Cadence spectre simulator with 180nm technology. Simulation results show that this implantable amplifier is suitable for Epileptic seizure prediction.


2011 ◽  
Vol E94-C (10) ◽  
pp. 1698-1701
Author(s):  
Yang SUN ◽  
Chang-Jin JEONG ◽  
In-Young LEE ◽  
Sang-Gug LEE

2021 ◽  
Vol 324 ◽  
pp. 112681
Author(s):  
Jianhui Sun ◽  
Zibin Wang ◽  
Tongxi Wang ◽  
Guozhu Liu ◽  
Jiangwei Tian
Keyword(s):  

2021 ◽  
Author(s):  
Rafael Vieira ◽  
Nuno Horta ◽  
Nuno Lourenço ◽  
Ricardo Póvoa

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