scholarly journals Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

Author(s):  
J.G. Zhu ◽  
C.W. White ◽  
J.D. Budai ◽  
S.P. Withrow ◽  
D.O. Henderson
2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting

1989 ◽  
Vol 157 ◽  
Author(s):  
Tian Wei ◽  
Cai Weiping

ABSTRACTA cermet coating was obtained on a silicon-deposited pure iron surface by means of a single treatment integrating ion implantation and ion beam mixing. As conpared with either simple ion implantation or simple ion beam mixing,the integrated treatment provides the cermet coating with an electrochemical performance far better than the simple treatments.


1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.


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