AbstractWe present numerical calculations of tunneling through ultra thin wurtzite Gallium Nitride cap layers on p-doped wurtzite silicon carbide . We demonstrate the predominance of tunneling of the split-off holes to the total carrier flux, with the contribution of the heavy and the light holes damped by the large potential barrier. We calculate the contributions of spontaneous and piezoelectric polarizations to the tunneling profile seen by the holes. Two orders of magnitude enhancement is seen in the transmission probabilities for a 10 angstroms thick Gallium Nitride cap layer for holes very close to the valence band edge, compared to a barrier without any gallium nitride cap. The contact resistances are also calculated for the Gallium Nitride tunneling caps and more than two orders of magnitude lowering is seen with the ultra-thin caps. Larger cap widths induce hole accumulation layers, but the advantages of hole accumulation are offset by the higher effective tunneling width. Our calculations are relevant to nanostructures and nanodevices involving heterojunctions between gallium nitride and silicon carbide and provide the basis for low contact resistances with as-deposited metals. While our calculations focus on the regime of very high barriers to the metal of the order of 1.5 - 2 electron volts, where the method of ultra-thin caps is most useful, similar conclusions also hold for lower barrier heights.
Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces
