ABSTRACTA doped channel heterojunction Field Effect Transistor (Metal-Doped Channel Field Effect Transistor, MEDFET) was fabricated using a molecular beam epitaxially (MBE) grown structure and excimer laser processed TiW-silicide ohmic contacts and TIW-Si gate metallization. The device was characterized at X-band frequencies in order to investigate the potential benefits of the semiconductor MBE structure and the potential stability of the laser processed TiW/Si electrode metallizations.
