Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

2019 ◽  
Author(s):  
J. Charles Pravin ◽  
S. Nalayira Muthu ◽  
F. Pravin Raja ◽  
V. Srinivas
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

2003 ◽  
Vol 32 (5) ◽  
pp. 388-394 ◽  
Author(s):  
A. P. Zhang ◽  
L. B. Rowland ◽  
E. B. Kaminsky ◽  
V. Tilak ◽  
J. C. Grande ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1094-1098 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keisuke Shinohara ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
High Electron ◽  
Fabrication Technology ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness

1995 ◽  
Vol 378 ◽  
Author(s):  
Marjohn Meshkinpour ◽  
Mark S. Goorsky ◽  
Dwight C. Streit ◽  
Thomas R. Block ◽  
Mike Wojtowicz
Keyword(s):  
Electron Mobility ◽  
Poor Performance ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
Channel Thickness

AbstractIn this study, we examined the performance of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors with varying channel layer thicknesses for indium mole fractions of 0.21 and 0.24. For both compositions, we find that there is an optimum channel thickness above which the device performance is impaired. As expected the effective critical thickness of the In0.2iGa0.79As layer is higher. Surprisingly, however, transmission electron microscopy of the device structures indicates that the device performance is not impaired by the presence of a linear array of misfit dislocations. In fact, the devices with highest performance have misfit dislocations indicating that defect engineering may lead to improved performance in these structures. Furthermore, we find that device structures with poor performance have misfit dislocations along both of the <110> directions. Triple axis x-ray diffraction provides a non-destructive estimate of the dislocation densities present.

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