Comparative study of Curvature Correction in CMOS Bandgap Reference Circuit

2020 ◽  
Author(s):  
Anushree ◽  
Jasdeep Kaur
Keyword(s):  
Comparative Study ◽  
Bandgap Reference ◽  
Curvature Correction ◽  
Reference Circuit

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

scholarly journals A high supply voltage bandgap reference circuit using drain-extended MOS devices

2013 ◽  
Vol 10 (8) ◽  
pp. 20130142-20130142
Author(s):  
Geun Rae Cho ◽  
Kyung Woon Hwang ◽  
Tag Gon Kim
Keyword(s):  
Supply Voltage ◽  
Bandgap Reference ◽  
Mos Devices ◽  
Reference Circuit
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