Perpendicular magnetic anisotropy in Fe/sub 16/N/sub 2/[001] single crystal films epitaxially grown by molecular beam epitaxy

1999 ◽  
Author(s):  
H. Takahashi ◽  
M. Igarashi ◽  
A. Kaneko ◽  
H. Miyajima ◽  
Y. Sugita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Magnetic Anisotropy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Single Crystal Films ◽  
Crystal Films

Epitaxial growth of Cu-Ni Single Crystal Alloys and Multilayers by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Substrate Material ◽  
High Reactivity ◽  
Lattice Match ◽  
Single Crystal Films ◽  
Crystal Films

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 509-511 ◽  
Author(s):  
Masahiko Kitagawa ◽  
Yoshitaka Tomomura ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films

Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and (000\bar1) by Molecular Beam Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2829-2833 ◽  
Author(s):  
Masashi Harada ◽  
Yukari Ishikawa ◽  
Tomohiro Saito ◽  
Noriyoshi Shibata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Single Crystal Films ◽  
Crystal Films

scholarly journals InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy

2010 ◽  
Vol 59 (11) ◽  
pp. 8026
Author(s):  
Zhang Yan-Hui ◽  
Chen Ping-Ping ◽  
Li Tian-Xin ◽  
Yin Hao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Single Crystal Films ◽  
Crystal Films

Optical and Microstructural Characterisation of InN Grown by PAMBE on (0001) Sapphire and (001) YSZ

2003 ◽  
Vol 798 ◽  
Author(s):  
P. A. Anderson ◽  
C. E. Kendrick ◽  
T. E. Lee ◽  
W. Diehl ◽  
R. J. Reeves ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Polycrystalline Films ◽  
Cubic Phases ◽  
Final Layer ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Microstructural Characterisation

ABSTRACTInN continues to be a topic of great interest, particularly with respect to the issues surrounding its bandgap energy. To further explore this material and its properties, we have grown 200–300 nm InN films by a plasma-assisted molecular beam epitaxy (PAMBE) technique on a variety of substrates, including (0001) sapphire, (100) InAs, and both (100) and (111) YSZ. Single-crystal films regardless of quality all show the commonly reported broad luminescence feature in the range of 0.7 to 0.8 eV, although we have also observed this feature in polycrystalline films. Growth on (100) InAs and (100) YSZ was motivated by a desire to explore cubic InN; in both cases growth appears to be initially cubic, but a mixture of hexagonal and cubic phases is detected in the final layer.

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