Influence of MgO Tunnel Barrier thickness in 3-terminal Spin Hall Nano-Oscillators

Author(s):  
M. Tarequzzaman ◽  
T. Boehnert ◽  
A. Jenkins ◽  
J. Borme ◽  
E. Paz ◽  
...  
2013 ◽  
Vol 87 (9) ◽  
Author(s):  
Witold Skowroński ◽  
Maciej Czapkiewicz ◽  
Marek Frankowski ◽  
Jerzy Wrona ◽  
Tomasz Stobiecki ◽  
...  

2008 ◽  
Vol 44 (11) ◽  
pp. 2547-2550 ◽  
Author(s):  
Ji Ung Cho ◽  
Do Kyun Kim ◽  
Tian Xing Wang ◽  
S. Isogami ◽  
M. Tsunoda ◽  
...  

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.


2018 ◽  
Vol 54 (11) ◽  
pp. 1-4
Author(s):  
M. Tarequzzaman ◽  
T. Bohnert ◽  
A. S. Jenkins ◽  
J. Borme ◽  
E. Paz ◽  
...  

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