Quantum-Cross Tunneling Junction for High Density Memory

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi
Keyword(s):  
Transport Properties ◽  
Barrier Height ◽  
Current Density ◽  
Tunnel Barrier ◽  
Ribbon Thickness ◽  
Barrier Thickness ◽  
Current Voltage ◽  
Thick Barrier ◽  
Current Voltage Characteristics ◽  
Interesting Behavior

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures

2001 ◽  
Vol 693 ◽  
Author(s):  
Madhusudan Singh ◽  
Jaspirt Singh ◽  
Umesh Mishra
Keyword(s):  
Theoretical Calculation ◽  
Current Density ◽  
Tunneling Current ◽  
Barrier Thickness ◽  
Linear Current ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Non Linear ◽  
Linear Behaviour ◽  
Sheet Charge

In this paper, we report calculations that show that a metal-polar semiconductor heterostructure can exhibit highly controllable non-linear current-voltage (I-V) characteristics. Change in barrier thickness can alter the characteristics from Schottky-like to ohmic in different bias regimes. The origin of these unusual effects is a large electric field (> 106 V/cm) and high sheet charge (∼1013 – 1014 cm-2) without doping, in the polar heterostructure. Theoretical calculation of the tunneling current density in these systems indicates that very interesting non-linear behaviour is shown by theseystems, ev en in the undoped case. Choice of suitable compositions of the materials and thicknesses can be used to tailor devices with desired characteristics.

SUPERCONDUCTIVITY ASSOCIATED WITH THE GRANULAR STRUCTURE IN Ba2YCu3O7−δ

1988 ◽  
Vol 02 (08) ◽  
pp. 1011-1015
Author(s):  
YONG ZHAO ◽  
QIRUI ZHANG ◽  
WEIYAN GUAN ◽  
JIANSHENG XIA ◽  
ZHENHUI HE ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Single Phase ◽  
Granular Structure ◽  
Current Voltage ◽  
Granular Superconductivity ◽  
Current Voltage Characteristics ◽  
The Magnetic Field ◽  
Nonmonotonic Behavior

The dependence of the resistance on the magnetic field and the current-voltage characteristics of the single phase Ba 2 YCu 3 O 7−δ have been measured. The nonmonotonic behavior and a hysteresis of R(H) and the current-voltage characteristics suggest that the granular superconductivity exist in this material, and it plays an important role in transport properties.

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850082 ◽  
Author(s):  
NEZIR YILDIRIM ◽  
ABDULMECIT TURUT ◽  
HULYA DOGAN
Keyword(s):  
Barrier Height ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Current Voltage Characteristic ◽  
Gaussian Distributions ◽  
Linear Behavior ◽  
Current Voltage ◽  
Device Applications ◽  
Barrier Type ◽  
Current Voltage Characteristics

The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

scholarly journals Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

2020 ◽  
Vol 11 ◽  
pp. 252-262 ◽  
Author(s):  
Tairzhan Karabassov ◽  
Anastasia V Guravova ◽  
Aleksei Yu Kuzin ◽  
Elena A Kazakova ◽  
Shiro Kawabata ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Magnetic Scattering ◽  
Tunnel Barrier ◽  
Current Voltage ◽  
Diffusive Limit ◽  
Current Voltage Characteristics ◽  
Metallic Ferromagnet ◽  
Scattering Time ◽  
The Right ◽  
Weak Ferromagnetic

We present a quantitative study of the current–voltage characteristics (CVC) of SFIFS Josephson junctions (S = bulk superconductor, F = metallic ferromagnet, I = insulating barrier) with weak ferromagnetic interlayers in the diffusive limit. The problem is solved in the framework of the nonlinear Usadel equations. We consider the case of a strong tunnel barrier such that the left SF and the right FS bilayers are decoupled. We calculate the density of states (DOS) in SF bilayers using a self-consistent numerical method. Then we obtain the CVC of corresponding SFIFS junctions, and discuss their properties for different set of parameters including the thicknesses of ferromagnetic layers, the exchange field, and the magnetic scattering time. We observe an anomalous nonmonotonic CVC in case of weak ferromagnetic interlayers, which we attribute to DOS energy dependencies in the case of small exchange fields in the F layers.

Sign in / Sign up

Export Citation Format

Share Document