Tunnel barrier thickness dependence of Hanle-type signals in CoFe/MgO/n-Si and CoFe/MgO/n-Ge junctions investigated through three-terminal configuration

2012 ◽  
Author(s):  
T. Uemura ◽  
G. F. Li ◽  
J. Fujisawa ◽  
K. Kondo ◽  
K. Matsuda ◽  
...  
Keyword(s):  
Thickness Dependence ◽  
Tunnel Barrier ◽  
Barrier Thickness

Influence of MgO Tunnel Barrier thickness in 3-terminal Spin Hall Nano-Oscillators

2018 ◽  
Author(s):  
M. Tarequzzaman ◽  
T. Boehnert ◽  
A. Jenkins ◽  
J. Borme ◽  
E. Paz ◽  
...  
Keyword(s):  
Tunnel Barrier ◽  
Barrier Thickness

scholarly journals Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

2013 ◽  
Vol 87 (9) ◽  
Author(s):  
Witold Skowroński ◽  
Maciej Czapkiewicz ◽  
Marek Frankowski ◽  
Jerzy Wrona ◽  
Tomasz Stobiecki ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer ◽  
Tunnel Barrier ◽  
Barrier Thickness

Magnetoresistance Variation of Magnetic Tunnel Junctions with NiFeSiB/CoFeB Free Layers Depending on MgO Tunnel Barrier Thickness

2008 ◽  
Vol 44 (11) ◽  
pp. 2547-2550 ◽  
Author(s):  
Ji Ung Cho ◽  
Do Kyun Kim ◽  
Tian Xing Wang ◽  
S. Isogami ◽  
M. Tsunoda ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier ◽  
Barrier Thickness

Quantum-Cross Tunneling Junction for High Density Memory

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi
Keyword(s):  
Transport Properties ◽  
Barrier Height ◽  
Current Density ◽  
Tunnel Barrier ◽  
Ribbon Thickness ◽  
Barrier Thickness ◽  
Current Voltage ◽  
Thick Barrier ◽  
Current Voltage Characteristics ◽  
Interesting Behavior

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

scholarly journals Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

RSC Advances ◽  
2019 ◽  
Vol 9 (51) ◽  
pp. 29967-29972
Author(s):  
Jun Dar Hwang ◽  
Jhong Yung Jiang
Keyword(s):  
Quantum Well ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Thickness Dependence ◽  
Radio Frequency Magnetron Sputtering ◽  
Barrier Thickness ◽  
System P ◽  
Sputtering System

An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence

2000 ◽  
Vol 221 (1-4) ◽  
pp. 373-377 ◽  
Author(s):  
Sang Kee Shee ◽  
Y.H Kwon ◽  
J.B Lam ◽  
G.H Gainer ◽  
G.H Park ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Thickness Dependence ◽  
Barrier Thickness ◽  
Time Resolved ◽  
Mocvd Growth
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