Bypass Diode Faults Analysis of Multi Crystalline PV Module Based on Electrical Characteristics Behaviors

Author(s):  
Olfa Bel Hadj Brahim Kechiche ◽  
Marwa Abiadh
2014 ◽  
Vol 550 ◽  
pp. 137-143 ◽  
Author(s):  
S. Narendiran ◽  
Sarat Kumar Sahoo

The paper discuss about the modelling and electrical characteristics of photovoltaic cell and its array type of construction in matlab-simulink environment at different insolation levels. The photovoltaic module is modelled using the diode electrical characteristic equation. The photovoltaic cell is analysed by voltage input and current input modules, The voltage and current input photovoltaic modules are simulated with different insolation values by varying the construction of PV modules. The results conclude that the current input PV module is well suited for applications were it shares same current when connected in series and voltage input PV module, where it shares same voltage when connected in parallel.


2017 ◽  
Vol 37 (4) ◽  
pp. 1-11
Author(s):  
Woo-Gyun Shin ◽  
Seok-Hwan Go ◽  
Young-Chul Ju ◽  
Hyung-Jun Song ◽  
Gi-Hwan Kang

2015 ◽  
Vol 35 (4) ◽  
pp. 67-75 ◽  
Author(s):  
Woo-Gyun Shin ◽  
Tae-Hee Jung ◽  
Seok-Hwan Go ◽  
Young-Chul Ju ◽  
Hyo-Sik Chang ◽  
...  

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2416 ◽  
Author(s):  
Woo Shin ◽  
Suk Ko ◽  
Hyung Song ◽  
Young Ju ◽  
Hye Hwang ◽  
...  

Bypass diodes have been widely utilized in crystalline silicon (c-Si) photovoltaic (PV) modules to maximize the output of a PV module array under partially shaded conditions. A Schottky diode is used as the bypass diode in c-Si PV modules due to its low operating voltage. In this work, we systematically investigated the origin of bypass diode faults in c-Si PV modules operated outdoors. The temperature of the inner junction box where the bypass diode is installed increases as the ambient temperature increases. Its temperature rises to over 70 °C on sunny days in summer. As the temperature of the junction box increases from 25 to 70 °C, the leakage current increases up to 35 times under a reverse voltage of 15 V. As a result of the high leakage current of the bypass diode at high temperature, melt down of the junction barrier between the metal and semiconductor has been observed in damaged diodes collected from abnormally functioning PV modules. Thus, it is believed that the constant leakage current applied to the junction caused the melting of the junction, thereby resulting in a failure of both the bypass diode and the c-Si PV module.


2019 ◽  
Vol 9 (5) ◽  
pp. 4600-4604
Author(s):  
A. R. Jatoi ◽  
S. R. Samo ◽  
A. Q. Jakhrani

The electrical characteristics of photovoltaic (PV) modules are affected by solar radiation and module temperature in outdoor environment. It was found that polycrystalline gained a yearly 0.50°C more average module temperature than monocrystalline. Non-crystalline amorphous modules got a yearly 0.83°C more average temperature than thin film modules. The attainment and release of module temperature was related with material properties of PV module technologies. The amorphous module gave 5.7%, 2.7% and 15.0% more yearly average open-circuit voltage than polycrystalline, monocrystalline and thin film modules. Besides that, the thin film modules gave 6.5% and 1.7%, 9.3% and 4.0%, and 11.3% and 8.8% more yearly average normalized short-circuit current and power output than polycrystalline, monocrystalline and thin film modules respectively. It was shown that the maximum annual average open-circuit voltage was given by amorphous modules and maximum short-circuit current and power output by thin film modules during the study period.


2016 ◽  
Vol 36 (5) ◽  
pp. 63-71
Author(s):  
Woogyun Shin ◽  
Seokhwan Go ◽  
Youngchul Ju ◽  
Hyosik Chang ◽  
Gihwan Kang
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