Predicting the vulnerability of memories to muon-induced SEUs with low-energy proton tests informed by Monte Carlo simulations

Author(s):  
J. M. Trippe ◽  
R. A. Reed ◽  
B. D. Sierawski ◽  
R. A. Weller ◽  
R. A. Austin ◽  
...  
2017 ◽  
Vol 56 (6) ◽  
pp. 779-786 ◽  
Author(s):  
Tordis J. Dahle ◽  
Anne Marit Rykkelid ◽  
Camilla H. Stokkevåg ◽  
Andrea Mairani ◽  
Andreas Görgen ◽  
...  

2017 ◽  
Vol 123 ◽  
pp. S179-S180
Author(s):  
T.J. Dahle ◽  
A.M. Rykkelid ◽  
C.H. Stokkevåg ◽  
A. Görgen ◽  
N.J. Edin ◽  
...  

2012 ◽  
Vol 24 (12) ◽  
pp. 2979-2982
Author(s):  
王韬 Wang Tao ◽  
荆晓兵 Jing Xiaobing ◽  
庞建 Pang Jian ◽  
何小中 He Xiaozhong ◽  
张开志 Zhang Kaizhi ◽  
...  

2001 ◽  
Vol 61 (3-6) ◽  
pp. 593-595 ◽  
Author(s):  
Indra J. Das ◽  
Alireza Kassaee ◽  
Frank Verhaegen ◽  
Vadim P. Moskvin

1998 ◽  
Vol 05 (06) ◽  
pp. 1151-1158 ◽  
Author(s):  
J. B. Hannon ◽  
G. L. Kellogg ◽  
M. C. Bartelt ◽  
N. C. Bartelt

We describe Monte Carlo simulations and diffusion equation analysis which are useful in deriving kinetic parameters from low energy electron microscopy experiments. An analysis of the etching of the Si(001) surface with molecular oxygen is made, illustrating the power of these techniques.


Sign in / Sign up

Export Citation Format

Share Document