A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

2019 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2019.8720460 ◽

2019 ◽

Author(s):

Jie Jack Zeng ◽

Ruchil Jain ◽

Kyong Jin Hwang ◽

Robert Gauthier

Keyword(s):

Protection Device ◽

Esd Protection ◽

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PNP-eSCR ESD protection device with tunable trigger and holding voltage for high voltage applications

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.1109/eosesd.2016.7592526 ◽

2016 ◽

Author(s):

Da-Wei Lai ◽

Shuang Zhao ◽

Jian Gao ◽

Theo Smedes

Keyword(s):

High Voltage ◽

Protection Device ◽

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Transmission Line Pulse Method with Arbitrary Characteristic Impedance for Immunity Evaluation of ESD Protection Device

10.1109/icsj52620.2021.9648864 ◽

2021 ◽

Author(s):

Kyousuke Tanaka ◽

Tohlu Matsushima ◽

Yuki Fukumoto

Keyword(s):

Transmission Line ◽

Characteristic Impedance ◽

Pulse Method ◽

Protection Device ◽

Arbitrary Characteristic ◽

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Simulation of the HPM power and pulse width on the influence of ESD protection device

2016 Progress in Electromagnetic Research Symposium (PIERS) ◽

10.1109/piers.2016.7735132 ◽

2016 ◽

Author(s):

Zhijuan Huang ◽

Meiqin Liu ◽

Ming Zhu ◽

Yong Li

Keyword(s):

Pulse Width ◽

Protection Device ◽

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An ESD Protection Device Simulation-Design Methodology based on MEDICI

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306160 ◽

2006 ◽

Author(s):

Bin Li ◽

Ruoyu Li ◽

Hongwei Luo

Keyword(s):

Design Methodology ◽

Device Simulation ◽

Protection Device ◽

Simulation Design ◽

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The embedded SCR NMOS and low capacitance ESD protection device

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) ◽

10.1109/cicc.2002.1012774 ◽

2003 ◽

Author(s):

Jian-Hsing Lee ◽

Y.H. Wu ◽

K.R. Peng ◽

R.Y. Chang ◽

T.L. Yu ◽

...

Keyword(s):

Protection Device ◽

Esd Protection ◽

Low Capacitance

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Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

IEICE Electronics Express ◽

10.1587/elex.8.8 ◽

2011 ◽

Vol 8 (1) ◽

pp. 8-12

Author(s):

Yong-Seo Koo

Keyword(s):

Electrical Characteristics ◽

Protection Device ◽

Process Technology ◽

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Analysis of the electrical characteristics of novel ESD protection device with high holding voltage under various temperatures

TENCON 2009 - 2009 IEEE Region 10 Conference ◽

10.1109/tencon.2009.5395895 ◽

2009 ◽

Author(s):

Jong-Il Won ◽

Hyun-Duck Lee ◽

Kang-Yoon Lee ◽

Kwi-Dong Kim ◽

Yong-Seo Koo

Keyword(s):

Electrical Characteristics ◽

Protection Device ◽

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High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2917264 ◽

2019 ◽

Vol 66 (7) ◽

pp. 2884-2891 ◽

Author(s):

Da-Wei Lai ◽

Gijs de Raad ◽

Stephen Sque ◽

Wim Peters ◽

Theo Smedes

Keyword(s):

High Voltage ◽

Protection Device ◽

Esd Protection ◽

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DNW-Controllable triggered voltage of the integrated diode triggered SCR (IDT-SCR) ESD protection device

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) ◽

10.23919/eosesd.2017.8073414 ◽

2017 ◽

Author(s):

Da-Wei Lai ◽

Wei-Jhih Tseng ◽

Gijs de Raad ◽

Theo Smedes

Keyword(s):

Protection Device ◽

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N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device with High Latchup Immunity for High Voltage Operating I/O Application

10.7567/ssdm.2006.p-3-21 ◽

2006 ◽

Author(s):

Yong-Jin Seo ◽

Kil-Ho Kim

Keyword(s):

High Voltage ◽

Protection Device ◽

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