Quaternary AlInGaN photodetectors with MIS structure

2009 ◽  
Author(s):  
H. Hung ◽  
S.J. Chang ◽  
S.J. Young ◽  
Y.C. Lin ◽  
S.M. Wang ◽  
...  
Keyword(s):  
Mis Structure

Integrated hydrogen leak detector with a tunnel mis structure

1988 ◽  
Vol 13 (4) ◽  
pp. 315-321 ◽  
Author(s):  
Kenji Murakami ◽  
Dong-Bai Ye ◽  
Tatsuo Yamamoto
Keyword(s):  
Mis Structure ◽  
Leak Detector

Humidity sensitive MIS structure

1985 ◽  
Vol 18 (7) ◽  
pp. 577-586 ◽  
Author(s):  
L W Westcott ◽  
G Rogers
Keyword(s):  
Mis Structure

Experiments in MIS structure based on germanium and improvements of the interfacial properties

2000 ◽  
Vol 62 (3) ◽  
pp. 273-276 ◽  
Author(s):  
Z Benamara ◽  
S Tizi ◽  
M Chellali ◽  
B Gruzza
Keyword(s):  
Interfacial Properties ◽  
Mis Structure

Pd/AlN/Si or SiC Structure for Hydrogen Sensing Device

2000 ◽  
Vol 622 ◽  
Author(s):  
Flaminia Serina ◽  
C. Huang ◽  
G. W. Auner ◽  
R. Naik ◽  
S. Ng ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Hydrogen Sensor ◽  
Plasma Source ◽  
Metal Electrode ◽  
Pressure Effects ◽  
Mis Structure ◽  
Hydrocarbon Gases ◽  
Hydrogen Sensing ◽  
Design Structure ◽  
Aln Film

ABSTRACTAn AlN (insulator) MIS Hydrogen Sensor was created using plasma source molecular beam epitaxy (PSMBE) deposition on Si (111) and 6H-SiC. A Pd layer was deposited on top of the AlN film via magnetron sputtering technique utilizing a hard mask. Pd was chosen since H2 readily diffuses within its bulk, thus Pd acts not only as a metal electrode of the MIS structure, but also as a catalyst for hydrogen dissociation. To optimize the design structure several sensors with different AlN and Pd thickness have been developed. RHEED and XRD measurements show that AlN film is epitaxial on both Si (111) and 6H-SiC substrates. The sensors were characterized using capacitance versus voltage C(V) and I(V) measurements, at different frequencies ranging from 1kHz to 1 MHz. Shifts in the C-V and I-V curves occurred with the introduction of hydrogen in the chamber. The temperature, hydrogen partial pressure, effects of oxygen and hydrocarbon gases, insulator and metal thicknesses on sensor response were analyzed.

ESCA compositional profiles and electrical properties of diamond-like carbon film/Si MIS structure

1987 ◽  
Vol 70 (1) ◽  
pp. 40-48
Author(s):  
Yusuke Mizokawa ◽  
Osamu Komoda ◽  
Tatsuro Miyasato ◽  
Shigehiko Hasegawa ◽  
Masao Tokumura ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carbon Film ◽  
Mis Structure ◽  
Diamond Like Carbon ◽  
Diamond Like Carbon Film

Electrostatics of a spherical tunnel MIS structure

2011 ◽  
Vol 110 (4) ◽  
pp. 044323 ◽  
Author(s):  
M. I. Vexler
Keyword(s):  
Mis Structure

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

2011 ◽  
Vol 22 (45) ◽  
pp. 455702 ◽  
Author(s):  
Xing Wu ◽  
Kin-Leong Pey ◽  
Nagarajan Raghavan ◽  
Wen-Hu Liu ◽  
Xiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mis Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism
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