2009 International Semiconductor Device Research Symposium
Latest Publications

TOTAL DOCUMENTS

321

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424460304

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378069 ◽

2009 ◽

Author(s):

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jeong-Hoon Oh ◽

Kyung-Chang Ryoo ◽

...

Keyword(s):

High Performance ◽

Fabrication And Characterization

Download Full-text

Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378010 ◽

2009 ◽

Cited By ~ 1

Author(s):

Mirko Poljak ◽

Vladimir Jovanovic ◽

Tomislav Suligoj

Keyword(s):

Thin Body ◽

Double Gate ◽

Limited Mobility

Download Full-text

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378032 ◽

2009 ◽

Author(s):

E.J. Katz ◽

Z. Zhang ◽

H.L. Hughes ◽

K.-B. Chung ◽

G. Lucovsky ◽

...

Keyword(s):

Electronic Properties ◽

Gate Dielectrics ◽

Radiation Tolerant

Download Full-text

Comprehensive temperature modeling of strained epitaxial silicon-germanium alloy thermistors

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378337 ◽

2009 ◽

Author(s):

B. Gunnar Malm ◽

Mohammad-Reza Kolahdouz ◽

Henry H. Radamson ◽

Mikael Ostling

Keyword(s):

Silicon Germanium ◽

Epitaxial Silicon ◽

Temperature Modeling ◽

Germanium Alloy

Download Full-text

A toggle MRAM bit modeled in Verilog-A

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378152 ◽

2009 ◽

Author(s):

L. Engelbrecht ◽

A. Jander ◽

P. Dhagat

Download Full-text

3300 V, 30 A 4H-SiC power DMOSFETs

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378284 ◽

2009 ◽

Cited By ~ 2

Author(s):

Lin Cheng ◽

Sei-Hyung Ryu ◽

C. Jonas ◽

S. Dhar ◽

R. Callanan ◽

...

Download Full-text

Semiconductor-dielectric interfacial study using spectral-spatial photocurrent probes and 1/f noise probe in organic field effect transistors

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378133 ◽

2009 ◽

Author(s):

Zhang Jia ◽

I. Meric ◽

K. Shepard ◽

I. Kymissis

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

Download Full-text

Overview of FDSOI technology from substrate to device

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378173 ◽

2009 ◽

Cited By ~ 2

Author(s):

Bich-Yen Nguyen ◽

Carlos Mazure ◽

Daniel Delprat ◽

Cecile Aulnette ◽

Nicolas Daval ◽

...

Download Full-text

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378255 ◽

2009 ◽

Author(s):

Si-Young Park ◽

R. Anisha ◽

Sheng Jiang ◽

P.R. Berger ◽

R. Loo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Zero Bias

Download Full-text

Sub-micron Esaki Tunnel Diode fabrication and characterization

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378135 ◽

2009 ◽

Cited By ~ 2

Author(s):

D.J. Pawlik ◽

B. Romanczyk ◽

E. Freeman ◽

P.M. Thomas ◽

M. Barth ◽

...

Keyword(s):

Tunnel Diode ◽

Fabrication And Characterization

Download Full-text

2009 International Semiconductor Device Research SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics

Comprehensive temperature modeling of strained epitaxial silicon-germanium alloy thermistors

A toggle MRAM bit modeled in Verilog-A

3300 V, 30 A 4H-SiC power DMOSFETs

Semiconductor-dielectric interfacial study using spectral-spatial photocurrent probes and 1/f noise probe in organic field effect transistors

Overview of FDSOI technology from substrate to device

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

Sub-micron Esaki Tunnel Diode fabrication and characterization

2009 International Semiconductor Device Research Symposium
Latest Publications