2009 International Semiconductor Device Research Symposium
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9781424460304
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Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

2009 ◽  
Author(s):  
Jae Young Song ◽  
Jong Pil Kim ◽  
Sang Wan Kim ◽  
Jeong-Hoon Oh ◽  
Kyung-Chang Ryoo ◽  
...  
Keyword(s):  
High Performance ◽  
Fabrication And Characterization

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 gate dielectrics for radiation-tolerant electronics

2009 ◽  
Author(s):  
E.J. Katz ◽  
Z. Zhang ◽  
H.L. Hughes ◽  
K.-B. Chung ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Gate Dielectrics ◽  
Radiation Tolerant

Comprehensive temperature modeling of strained epitaxial silicon-germanium alloy thermistors

2009 ◽  
Author(s):  
B. Gunnar Malm ◽  
Mohammad-Reza Kolahdouz ◽  
Henry H. Radamson ◽  
Mikael Ostling
Keyword(s):  
Silicon Germanium ◽  
Epitaxial Silicon ◽  
Temperature Modeling ◽  
Germanium Alloy

A toggle MRAM bit modeled in Verilog-A

2009 ◽  
Author(s):  
L. Engelbrecht ◽  
A. Jander ◽  
P. Dhagat

3300 V, 30 A 4H-SiC power DMOSFETs

2009 ◽  
Author(s):  
Lin Cheng ◽  
Sei-Hyung Ryu ◽  
C. Jonas ◽  
S. Dhar ◽  
R. Callanan ◽  
...  

Overview of FDSOI technology from substrate to device

2009 ◽  
Author(s):  
Bich-Yen Nguyen ◽  
Carlos Mazure ◽  
Daniel Delprat ◽  
Cecile Aulnette ◽  
Nicolas Daval ◽  
...  

Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

2009 ◽  
Author(s):  
Si-Young Park ◽  
R. Anisha ◽  
Sheng Jiang ◽  
P.R. Berger ◽  
R. Loo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zero Bias

Sub-micron Esaki Tunnel Diode fabrication and characterization

2009 ◽  
Author(s):  
D.J. Pawlik ◽  
B. Romanczyk ◽  
E. Freeman ◽  
P.M. Thomas ◽  
M. Barth ◽  
...  
Keyword(s):  
Tunnel Diode ◽  
Fabrication And Characterization
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