2009 International Semiconductor Device Research Symposium
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9781424460304
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Mobility measurements in Gd silicate/TiN SOI and sSOI n-MOSFETs

2009 ◽  
Author(s):  
M. Schmidt ◽  
H.D.B. Gottlob ◽  
D. Buca ◽  
S. Mantl ◽  
H. Kurz

Gate leakage effects of annealing Lanthanum Oxide on Gallium Nitride

2009 ◽  
Author(s):  
M.T. Veety ◽  
V.D. Wheeler ◽  
D.J. Lichtenwalner ◽  
M.A.L. Johnson ◽  
D.W. Barlage
Keyword(s):  
Gallium Nitride ◽  
Lanthanum Oxide ◽  
Gate Leakage

Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection

2009 ◽  
Author(s):  
Xingguang Zhu ◽  
Hang Dong Lee ◽  
Tian Feng ◽  
J. Rozen ◽  
A.C. Ahyi ◽  
...  
Keyword(s):  
Oxide Interface ◽  
Plasma Injection

Quaternary AlInGaN photodetectors with MIS structure

2009 ◽  
Author(s):  
H. Hung ◽  
S.J. Chang ◽  
S.J. Young ◽  
Y.C. Lin ◽  
S.M. Wang ◽  
...  
Keyword(s):  
Mis Structure

Overview of FDSOI technology from substrate to device

2009 ◽  
Author(s):  
Bich-Yen Nguyen ◽  
Carlos Mazure ◽  
Daniel Delprat ◽  
Cecile Aulnette ◽  
Nicolas Daval ◽  
...  
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