Low threshold 1.3μm InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763636 ◽

2005 ◽

Author(s):

A. Kasukawa ◽

Y. Imajo ◽

T. Namegaya ◽

Y. Hiratani ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Applied Physics Letters ◽

10.1063/1.115871 ◽

1996 ◽

Vol 68 (16) ◽

pp. 2240-2242 ◽

Author(s):

A. Bhattacharya ◽

L. J. Mawst ◽

S. Nayak ◽

J. Li ◽

T. F. Kuech

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Quantum Well Laser ◽

Gaas Substrates ◽

Interface Structures ◽

Metalorganic Chemical

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Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.97258 ◽

1986 ◽

Vol 49 (24) ◽

pp. 1659-1660 ◽

Author(s):

D. Feketa ◽

K. T. Chan ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Graded Index ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Long wavelength quantum well laser diodes grown by metalorganic chemical vapor deposition

10.1109/iciprm.1990.203007 ◽

1990 ◽

Author(s):

A. Kasukawa ◽

H. Okamoto

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Long Wavelength ◽

Quantum Well Laser ◽

Metalorganic Chemical

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AlGaAs/GaAs buried quantum well laser diodes by one time selective metalorganic chemical vapor deposition growth on dielectric window stripes

Applied Physics Letters ◽

10.1063/1.109621 ◽

1993 ◽

Vol 62 (26) ◽

pp. 3417-3419 ◽

Author(s):

M. Ogura ◽

Z. Y. Chen ◽

H. Kaneko ◽

S. Fujii ◽

H. Itoh ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Chemical Vapor Deposition Growth ◽

Quantum Well Laser ◽

Dielectric Window ◽

Metalorganic Chemical

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GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98104 ◽

1987 ◽

Vol 50 (11) ◽

pp. 635-637 ◽

Author(s):

D. Fekete ◽

D. Bour ◽

J. M. Ballantyne ◽

L. F. Eastman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Spatial Variation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90026 ◽

1978 ◽

Vol 32 (5) ◽

pp. 295-297 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

Nick Holonyak ◽

E. A. Rezek ◽

R. Chin

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Laser Operation ◽

Metalorganic Chemical

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InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.100935 ◽

1989 ◽

Vol 54 (6) ◽

pp. 499-501 ◽

Author(s):

P. K. York ◽

K. J. Beernink ◽

G. E. Fernández ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101242 ◽

1989 ◽

Vol 54 (2) ◽

pp. 105-107 ◽

Author(s):

K. M. Dzurko ◽

E. P. Menu ◽

C. A. Beyler ◽

J. S. Osinski ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Low Threshold ◽

Metalorganic Chemical

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