Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90026 ◽

1978 ◽

Vol 32 (5) ◽

pp. 295-297 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

Nick Holonyak ◽

E. A. Rezek ◽

R. Chin

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Laser Operation ◽

Metalorganic Chemical

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1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

IEEE Journal of Quantum Electronics ◽

10.1109/3.234387 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1528-1535 ◽

Author(s):

A. Kasukawa ◽

T. Namegaya ◽

T. Fukushima ◽

N. Iwai ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.108163 ◽

1992 ◽

Vol 61 (21) ◽

pp. 2506-2508 ◽

Author(s):

Y. Imajo ◽

A. Kasukawa ◽

T. Namegaya ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Metalorganic Chemical

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Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.90753 ◽

1979 ◽

Vol 34 (4) ◽

pp. 265-267 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

R. Chin ◽

N. Holonyak ◽

S. W. Kirchoefer

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Laser Operation ◽

Single Quantum ◽

Single Quantum Well ◽

Metalorganic Chemical

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Short‐wavelength room‐temperature continuous‐wave laser operation of InAlP‐InGaP superlattices grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.112181 ◽

1994 ◽

Vol 65 (7) ◽

pp. 854-856 ◽

Author(s):

R. V. Chelakara ◽

M. R. Islam ◽

J. G. Neff ◽

K. G. Fertitta ◽

A. L. Holmes ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Chemical Vapor ◽

Laser Operation ◽

Continuous Wave Laser ◽

Metalorganic Chemical

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Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

Applied Physics Letters ◽

10.1063/1.115871 ◽

1996 ◽

Vol 68 (16) ◽

pp. 2240-2242 ◽

Author(s):

A. Bhattacharya ◽

L. J. Mawst ◽

S. Nayak ◽

J. Li ◽

T. F. Kuech

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Quantum Well Laser ◽

Gaas Substrates ◽

Interface Structures ◽

Metalorganic Chemical

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Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.96515 ◽

1986 ◽

Vol 48 (6) ◽

pp. 413-414 ◽

Author(s):

Shiro Sakai ◽

Tetsuo Soga ◽

Masanari Takeyasu ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Laser Operation ◽

Si Substrates ◽

Double Heterostructures ◽

Metalorganic Chemical

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Low threshold 1.3μm InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763636 ◽

2005 ◽

Author(s):

A. Kasukawa ◽

Y. Imajo ◽

T. Namegaya ◽

Y. Hiratani ◽

T. Kikuta

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Strained Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Metalorganic Chemical

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Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-999-0028-8 ◽

1999 ◽

Vol 28 (3) ◽

pp. 287-289 ◽

Author(s):

Katsunori Yanashima ◽

Shigeki Hashimoto ◽

Tomonori Hino ◽

Kenji Funato ◽

Toshimasa Kobayashi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Continuous Wave ◽

Laser Diodes ◽

Chemical Vapor ◽

Continuous Wave Operation ◽

Metalorganic Chemical

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Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.96796 ◽

1986 ◽

Vol 48 (3) ◽

pp. 207-208 ◽

Author(s):

Masayuki Ishikawa ◽

Yasuo Ohba ◽

Hideto Sugawara ◽

Motoyuki Yamamoto ◽

Takatosi Nakanisi

Keyword(s):

Chemical Vapor Deposition ◽

Visible Light ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Laser Diodes ◽

Chemical Vapor ◽

Cw Operation ◽

Gaas Substrates ◽

Metalorganic Chemical

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Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91206 ◽

1979 ◽

Vol 35 (7) ◽

pp. 487-489 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

N. Holonyak ◽

R. M. Kolbas

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Injection Lasers ◽

Metalorganic Chemical

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