Selenization of Cu2ZnSnSe4 thin films by rapid thermal processing

Author(s):  
Jian-Wei Du ◽  
Shih-Chang Shei
1991 ◽  
Vol 70 (4) ◽  
pp. 2348-2352 ◽  
Author(s):  
R. Pascual ◽  
M. Sayer ◽  
C. V. R. Vasant Kumar ◽  
Lichun Zou

2019 ◽  
Vol 776 ◽  
pp. 259-265 ◽  
Author(s):  
Mengting Xie ◽  
Wei Zhu ◽  
Kin Man Yu ◽  
Zishu Zhu ◽  
Guanzhong Wang

2013 ◽  
Vol 24 (31) ◽  
pp. 315601 ◽  
Author(s):  
F Ferrarese Lupi ◽  
T J Giammaria ◽  
M Ceresoli ◽  
G Seguini ◽  
K Sparnacci ◽  
...  

1994 ◽  
Vol 35 ◽  
pp. 129-139 ◽  
Author(s):  
W. Riedl ◽  
J. Rimmasch ◽  
V. Probst ◽  
F. Karg ◽  
R. Guckenberger

2014 ◽  
Vol 6 (10) ◽  
pp. 7180-7188 ◽  
Author(s):  
Federico Ferrarese Lupi ◽  
Tommaso Jacopo Giammaria ◽  
Gabriele Seguini ◽  
Francesco Vita ◽  
Oriano Francescangeli ◽  
...  

2018 ◽  
Vol 80 ◽  
pp. 9-17 ◽  
Author(s):  
V. Vinayakumar ◽  
C.R. Obregón Hernández ◽  
S. Shaji ◽  
D.A. Avellaneda ◽  
J.A. Aguilar Martinez ◽  
...  

2015 ◽  
Vol 13 (1) ◽  
pp. 47-52 ◽  
Author(s):  
Dorian Leonardo Rodriguez Vela ◽  
Bindu Krishnan ◽  
Josue Amilcar Aguilar Martinez ◽  
Shadai Lugo Loredo ◽  
Sadasivan Shaji

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.


1996 ◽  
Vol 79 (4) ◽  
pp. 837-842 ◽  
Author(s):  
Stephen W. Russell ◽  
Karen A. Luptak ◽  
Carlos Tres A. Suchicital ◽  
Terry L. Alford ◽  
Vincent B. Pizziconi

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