Modelling of Phase Change Memory(PCM) cell for Circuit Simulation

2019 ◽  
Author(s):  
Jun-Young Kweon ◽  
Yun-Heup Song ◽  
Tony Tae-Hyoung Kim
Keyword(s):  
Phase Change ◽  
Circuit Simulation ◽  
Phase Change Memory ◽  
Change Memory

scholarly journals Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

2018 ◽  
Vol 65 (10) ◽  
pp. 4282-4289 ◽  
Author(s):  
Corentin Pigot ◽  
Marc Bocquet ◽  
Fabien Gilibert ◽  
Marina Reyboz ◽  
Olga Cueto ◽  
...  
Keyword(s):  
Phase Change ◽  
Circuit Simulation ◽  
Phase Change Memory ◽  
Compact Model ◽  
Change Memory

A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation

2008 ◽  
Vol 47 (4) ◽  
pp. 2696-2700 ◽  
Author(s):  
Der-Sheng Chao ◽  
Chenhsin Lien ◽  
Yan-Kai Chen ◽  
Yi-Bo Liao ◽  
Meng-Hsueh Chiang ◽  
...  
Keyword(s):  
Phase Change ◽  
Circuit Simulation ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Parameterized Model ◽  
Change Memory

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

Revisiting Hash Table Design for Phase Change Memory

2016 ◽  
Vol 49 (2) ◽  
pp. 18-26 ◽  
Author(s):  
Biplob Debnath ◽  
Alireza Haghdoost ◽  
Asim Kadav ◽  
Mohammed G. Khatib ◽  
Cristian Ungureanu
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Hash Table ◽  
Change Memory
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