Matching theory of cross-polarization suppression components for large-scale slot array antenna with high-gain horn

2017 ◽  
Author(s):  
Boyuan Ma ◽  
J. Pan
Keyword(s):  
Large Scale ◽  
High Gain ◽  
Array Antenna ◽  
Matching Theory ◽  
Cross Polarization

scholarly journals High-Gain Millimeter-Wave Patch Array Antenna for Unmanned Aerial Vehicle Application

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3914
Author(s):  
Kyei Anim ◽  
Jung-Nam Lee ◽  
Young-Bae Jung
Keyword(s):  
Surface Wave ◽  
Millimeter Wave ◽  
Large Scale ◽  
High Gain ◽  
Metal Plate ◽  
Array Antenna ◽  
Wave Radiation ◽  
Wave Band ◽  
Large Patch ◽  
Large Coupling

A high-gain millimeter-wave patch array antenna is presented for unmanned aerial vehicles (UAVs). For the large-scale patch array antenna, microstrip lines and higher-mode surface wave radiations contribute enormously to the antenna loss, especially at the millimeter-wave band. Here, the element of a large patch array antenna is implemented with a substrate integrated waveguide (SIW) cavity-backed patch fed by the aperture-coupled feeding (ACF) structure. However, in this case, a large coupling aperture is used to create strongly bound waves, which maximizes the coupling level between the patch and the feedline. This approach helps to improve antenna gain, but at the same time leads to a significant level of back radiation due to the microstrip feedline and unwanted surface-wave radiation, especially for the large patch arrays. Using the SIW cavity-backed patch and stripline feedline of the ACF in the element design, therefore, provides a solution to this problem. Thus, a full-corporate feed 32 × 32 array antenna achieves realized gain of 30.71–32.8 dBi with radiation efficiency above 52% within the operational band of 25.43–26.91 GHz. The fabricated antenna also retains being lightweight, which is desirable for UAVs, because it has no metal plate at the backside to support the antenna.

COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS

2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Signal Frequency ◽  
Output Impedance ◽  
Self Cascode ◽  
Intrinsic Gain ◽  
Body Bias

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.

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