Electron field emission from wide band-gap semiconductors (GaN)

Author(s):  
V. Litovchenko ◽  
A. Grygoriev ◽  
A. Evtukh ◽  
O. Yilmazoglu ◽  
H. Hartnagel ◽  
...  
2002 ◽  
Vol 81 (15) ◽  
pp. 2782-2784 ◽  
Author(s):  
R. Z. Wang ◽  
B. Wang ◽  
H. Wang ◽  
H. Zhou ◽  
A. P. Huang ◽  
...  

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle

1997 ◽  
Vol 15 (3) ◽  
pp. 1733-1738 ◽  
Author(s):  
V. V. Zhirnov ◽  
G. J. Wojak ◽  
W. B. Choi ◽  
J. J. Cuomo ◽  
J. J. Hren

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.


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