Concurrent Ternary Galois-based Computation using Nano-apex Multiplexing Nibs of Regular Three-dimensional Networks, Part II: Formalistic Architecture Realization

Novel realizations of concurrent computations utilizing three-dimensional lattice networks and their corresponding carbon-based field emission controlled switching is introduced in this article. The formalistic ternary nano-based implementation utilizes recent findings in field emission and nano applications which include carbon-based nanotubes and nanotips for three-valued lattice computing via field-emission methods. The presented work implements multi-valued Galois functions by utilizing concurrent nano-based lattice systems, which use two-to-one controlled switching via carbon-based field emission devices by using nano-apex carbon fibers and carbon nanotubes that were presented in the first part of the article. The introduced computational extension utilizing many-to-one carbon field-emission devices will be further utilized in implementing congestion-free architectures within the third part of the article. The emerging nano-based technologies form important directions in low-power compact-size regular lattice realizations, in which carbon-based devices switch less-costly and more-reliably using much less power than silicon-based devices. Applications include low-power design of VLSI circuits for signal processing and control of autonomous robots.

ZnO Nanowire-Based Field Emission Devices Through a Microelectronic Compatible Route

Nanostructured zinc oxide (ZnO) has attracted considerable interest for a wide range of applications, including its use as an active layer in gas sensor devices and as promising emitters for field emission devices. Although it is interesting for FE purposes, the synthesis of this material can be complex and non-compatible with microelectronic processes. To overcome this issue, this paper explores ZnO nanowires growth through thermal oxidation of zinc thin films. We applied this IC-compatible procedure to fabricate field emission cathodes. Analyses of Raman spectroscopy, X‑ray photoelectron spectrometry, X‑ray diffractometry and scanning electron microscopy confirmed that the processes applied were well succeeded in obtaining nanoscale structures of ZnO with dimensions up to 4 micrometers in length and 30‑100 nanometers in diameter. Electrical characterization showed an intense electron field emission on the active area of the device, with a low turn-on electric field (2.4 volts/micrometer). An innovative system based on image processing allowed electrical current mapping throughout the active area of the devices, providing information about the uniformity of the emitted current. These results demonstrate that the low-complex fabrication procedures adopted as well as the ZnO nanomaterial itself are suitable for FE devices development.