Resistive Second-Harmonic Impedance Continuous Class-F Power Amplifier With Over One Octave Bandwidth for Cognitive Radios

2013 ◽  
Vol 3 (4) ◽  
pp. 489-497 ◽  
Author(s):  
Zisheng Lu ◽  
Wenhua Chen
Keyword(s):  
Power Amplifier ◽  
Second Harmonic ◽  
Cognitive Radios ◽  
Class F

Design of Multioctave Bandwidth Power Amplifier Based on Resistive Second-Harmonic Impedance Continuous Class-F

2017 ◽  
Vol 27 (9) ◽  
pp. 830-832 ◽  
Author(s):  
Hang Huang ◽  
Bo Zhang ◽  
Cuiping Yu ◽  
Jinchun Gao ◽  
Yongle Wu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Second Harmonic ◽  
Class F

scholarly journals 2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1608
Author(s):  
Jongyun Na ◽  
Sang-Hwa Yi ◽  
Jaekyung Shin ◽  
Hyungmo Koo ◽  
Jongseok Bae ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Power Transmission ◽  
Second Harmonic ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Gan Hemt ◽  
Synchronous Rectifier ◽  
Power Transmission Systems ◽  
Tuning Circuit ◽  
Class F

This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

Analysis of High-Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifiers

2011 ◽  
Vol 59 (8) ◽  
pp. 2024-2036 ◽  
Author(s):  
Joon Hyung Kim ◽  
Sung Jun Lee ◽  
Bong Hyuk Park ◽  
Seung Hyun Jang ◽  
Jae Ho Jung ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Second Harmonic ◽  
Class F

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

Investigating Continuous Class-F Power Amplifier Using Nonlinear Embedding Model

2017 ◽  
Vol 27 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Ekta Aggrawal ◽  
Karun Rawat ◽  
Patrick Roblin
Keyword(s):  
Power Amplifier ◽  
Nonlinear Embedding ◽  
Class F
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