IMDD Transmission at Net Data Rate of 333 Gb/s Using Over-100-GHz-Bandwidth Analog Multiplexer and Mach–Zehnder Modulator

2019 ◽  
Vol 37 (8) ◽  
pp. 1772-1778 ◽  
Author(s):  
Hiroshi Yamazaki ◽  
Munehiko Nagatani ◽  
Hitoshi Wakita ◽  
Yoshihiro Ogiso ◽  
Masanori Nakamura ◽  
...  
2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.


2013 ◽  
Vol E96.C (2) ◽  
pp. 192-196 ◽  
Author(s):  
Isao MOROHASHI ◽  
Yoshihisa IRIMAJIRI ◽  
Takahide SAKAMOTO ◽  
Tetsuya KAWANISHI ◽  
Motoaki YASUI ◽  
...  

1998 ◽  
Author(s):  
Robert Kerczewski ◽  
Duc Ngo ◽  
Diepchi Tran ◽  
Quang Tran ◽  
Brian Kachmar

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