Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

2021 ◽  
pp. 1-1
Author(s):  
Cenk Ibrahim Ozdemir ◽  
Yannick De Koninck ◽  
Didit Yudistira ◽  
Nadezda Kuznetsova ◽  
Marina Baryshnikova ◽  
...  
ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4277-4282 ◽  
Author(s):  
Peter F. Satterthwaite ◽  
Ananth Saran Yalamarthy ◽  
Noah A. Scandrette ◽  
A. K. M. Newaz ◽  
Debbie G. Senesky

2015 ◽  
Vol 3 (15) ◽  
pp. 3702-3707 ◽  
Author(s):  
Haili Li ◽  
Shujie Jiao ◽  
Hongtao Li ◽  
Lin Li ◽  
Xitian Zhang

We report a grain and grain-boundary induced energy-edge modulated ZnO pomegranates-on-paper photodetector with high flexibility, low dark current, high responsivity and quick response.


2015 ◽  
Vol 3 (2) ◽  
pp. 313-317 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  

Cubic ZnMgO UVB photodetectors with low dark current, high responsivity and fast response speed are very promising for practical applications.


Author(s):  
Shoichiro Fukushima ◽  
Masaaki Shimatani ◽  
Satoshi Okuda ◽  
Shinpei Ogawa ◽  
Yasushi Kanai ◽  
...  

2014 ◽  
Vol 53 (2) ◽  
pp. 020305 ◽  
Author(s):  
Hideki Yagi ◽  
Naoko Inoue ◽  
Ryuji Masuyama ◽  
Tomokazu Katsuyama ◽  
Takehiko Kikuchi ◽  
...  

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