Low-dark-current waveguide InGaAs metal–semiconductor–metal photodetector monolithically integrated with InP grating coupler on III–V CMOS photonics platform

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EH01 ◽  
Author(s):  
Yongpeng Cheng ◽  
Yuki Ikku ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Dark Current ◽  
Grating Coupler ◽  
Monolithically Integrated ◽  
Metal Semiconductor Metal ◽  
Cmos Photonics

Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

2021 ◽  
pp. 1-1
Author(s):  
Cenk Ibrahim Ozdemir ◽  
Yannick De Koninck ◽  
Didit Yudistira ◽  
Nadezda Kuznetsova ◽  
Marina Baryshnikova ◽  
...  
Keyword(s):  
Dark Current ◽  
Ridge Waveguide ◽  
High Responsivity ◽  
Monolithically Integrated ◽  
Si Wafer

scholarly journals Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

2015 ◽  
Vol 23 (13) ◽  
pp. 16967 ◽  
Author(s):  
Jian Kang ◽  
Rui Zhang ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal

A Grating-Coupler-Enabled CMOS Photonics Platform

2011 ◽  
Vol 17 (3) ◽  
pp. 597-608 ◽  
Author(s):  
Attila Mekis ◽  
Steffen Gloeckner ◽  
Gianlorenzo Masini ◽  
Adithyaram Narasimha ◽  
Thierry Pinguet ◽  
...  
Keyword(s):  
Grating Coupler ◽  
Cmos Photonics

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

2018 ◽  
Vol 498 ◽  
pp. 35-42 ◽  
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Screw Dislocation ◽  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Solar Blind

Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson
Keyword(s):  
Low Temperature ◽  
Dark Current ◽  
Surface Passivation ◽  
Surface States ◽  
Time Response ◽  
Temporal Response ◽  
Dc Voltage ◽  
Ultrafast Optical ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

Mapping of Defects in Metal-Semiconductor-Metal (MSM) Detectors in Hg1−xCdxTe by Nuclear Microprobe

1993 ◽  
Vol 302 ◽  
Author(s):  
Patrick W. Leech ◽  
Sean P. Dooley ◽  
David N. Jamieson
Keyword(s):  
Active Region ◽  
Dark Current ◽  
Linear Growth ◽  
Cdte Layer ◽  
Nuclear Microprobe ◽  
High Quality ◽  
Growth Defects ◽  
Metal Semiconductor Metal ◽  
Contrast Microscopy ◽  
Equivalent Conditions

ABSTRACTThe incidence of compositional and structural inhomogenieties in MSM detectors based on Hg1−xCdxTe/GaAs and Hg1−xCdxTe/GaAs/Si has been examined by nuclear microprobe. With a 2 MeV He+ beam focussed to ≥5 μm, the microprobe has demonstrated the capability for RBS channelling in the active region of a Hg1−xCdxTe device and the imaging of defects by Channelling Contrast Microscopy (CCM). A series of linear growth defects in some Hg1−xCdxTe devices were identified using CCM. The channelling RBS spectra from these regions have shown an increase in χmin compared with the surrounding high quality crystal. The occurence of these defects was associated with a degradation in the performance of affected devices in an array. RBS spectra have also revealed the presence of an anomalous CdTe layer, correlating with a significant reduction in dark current and increase in breakdown voltage of these devices. RBS channelling of individual devices has identified differences in χmin between arrays which were prepared under equivalent conditions of growth and processing.

1.3 μm monolithically integrated waveguide‐interdigitated metal‐semiconductor‐metal photodetector on a GaAs substrate

1990 ◽  
Vol 56 (19) ◽  
pp. 1892-1894 ◽  
Author(s):  
C. Jagannath ◽  
A. Silletti ◽  
A. N. M. M. Choudhury ◽  
B. Elman ◽  
P. Melman
Keyword(s):  
Gaas Substrate ◽  
Monolithically Integrated ◽  
Metal Semiconductor Metal

AlInAs/GaInAs metal-semiconductor-metal photodiodes with very low dark current

1991 ◽  
Vol 15 (1-4) ◽  
pp. 267-270 ◽  
Author(s):  
A Temmar ◽  
J.P. Praseuth ◽  
J.F. Palmier ◽  
A. Scavennec
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal
Sign in / Sign up

Export Citation Format

Share Document