Impact of Iron Precipitates on Carrier Lifetime in As-Grown and Phosphorus-Gettered Multicrystalline Silicon Wafers in Model and Experiment

2014 ◽  
Vol 4 (3) ◽  
pp. 791-798 ◽  
Author(s):  
Wolfram Kwapil ◽  
Jonas Schon ◽  
Florian Schindler ◽  
Wilhelm Warta ◽  
Martin C. Schubert
Keyword(s):  
Carrier Lifetime ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Iron Precipitates

Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers

2005 ◽  
Vol 108-109 ◽  
pp. 519-524 ◽  
Author(s):  
Daniel Macdonald ◽  
Thomas Roth ◽  
L.J. Geerligs ◽  
Andres Cuevas
Keyword(s):  
Carrier Lifetime ◽  
Slow Cool ◽  
Solubility Limit ◽  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Precipitation Process ◽  
Slow Cooling ◽  
Lifetime Measurements ◽  
Diffusion Limited ◽  
Supersaturated State

Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered ‘fast’, meaning the interstitial Fe had no time to diffuse to precipitation sites, and should therefore be frozen-in, despite being far above the solubility limit at lower temperatures. A second ‘slow’ cool down to 650°C allowed ample time for the Fe to reach the surfaces or other internal precipitation sites. Surprisingly, in both cases the Fe remained in a supersaturated state. This indicates the precipitation process is not diffusion-limited, and that another energetic barrier to precipitate formation must be present. Since the slow cooling used here is similar to the cooling rate experienced by multicrystalline ingots after crystallisation, this precipitate-impeding mechanism is probably responsible for the surprisingly high interstitial Fe concentrations often found in as-grown multicrystalline silicon wafers.

Carrier Lifetime Measurements by Photoconductance at Low Temperature on Passivated Crystalline Silicon Wafers

2013 ◽  
Vol 1536 ◽  
pp. 119-125 ◽  
Author(s):  
Guillaume Courtois ◽  
Bastien Bruneau ◽  
Igor P. Sobkowicz ◽  
Antoine Salomon ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Doping Density ◽  
Lifetime Measurements ◽  
Effective Lifetime

ABSTRACTWe propose an implementation of the PCD technique to minority carrier effective lifetime assessment in crystalline silicon at 77K. We focus here on (n)-type, FZ, polished wafers passivated by a-Si:H deposited by PECVD at 200°C. The samples were immersed into liquid N2 contained in a beaker placed on a Sinton lifetime tester. Prior to be converted into lifetimes, data were corrected for the height shift induced by the beaker. One issue lied in obtaining the sum of carrier mobilities at 77K. From dark conductance measurements performed on the lifetime tester, we extracted an electron mobility of 1.1x104 cm².V-1.s-1 at 77K, the doping density being independently calculated in order to account for the freezing effect of dopants. This way, we could obtain lifetime curves with respect to the carrier density. Effective lifetimes obtained at 77K proved to be significantly lower than at RT and not to depend upon the doping of the a-Si:H layers. We were also able to experimentally verify the expected rise in the implied Voc, which, on symmetrically passivated wafers, went up from 0.72V at RT to 1.04V at 77K under 1 sun equivalent illumination.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

scholarly journals Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

2013 ◽  
Vol 23 (1) ◽  
pp. 30-36 ◽  
Author(s):  
Yacine Boulfrad ◽  
Antti Haarahiltunen ◽  
Hele Savin ◽  
Eivind J. Øvrelid ◽  
Lars Arnberg
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon

scholarly journals About the relevance of defect features in as-cut multicrystalline silicon wafers on solar cell performance

2018 ◽  
Author(s):  
Aditya Kovvali ◽  
Matthias Demant ◽  
Theresa Trötschler ◽  
Jonas Haunschild ◽  
Stefan Rein
Keyword(s):  
Solar Cell ◽  
Silicon Wafers ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Solar Cell Performance

scholarly journals INFRARED LBIC SCAN MAPS APPLIED TO ALUMINIUM GETTERED MULTICRYSTALLINE SILICON WAFERS

1991 ◽  
Vol 01 (C6) ◽  
pp. C6-237-C6-238 ◽  
Author(s):  
J. Y. NATOLI ◽  
M. PASQUINELLI ◽  
F. FLORET ◽  
S. MARTINUZZI
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon
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