A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control

2007 ◽  
Vol 42 (7) ◽  
pp. 1455-1463 ◽  
Author(s):  
U.R. Pfeiffer ◽  
D. Goren
Keyword(s):  
Power Amplifier ◽  
60 Ghz ◽  
Level Control ◽  
Fully Integrated ◽  
Automatic Level

A 60 GHz High Gain Transformer-Coupled Differential Cascode Power Amplifier in 65 nm CMOS

2011 ◽  
Vol E94-C (10) ◽  
pp. 1508-1514
Author(s):  
Jenny Yi-Chun LIU ◽  
Mau-Chung Frank CHANG
Keyword(s):  
Power Amplifier ◽  
High Gain ◽  
60 Ghz

Automatic Control of Molten Metal Flow for Improving Casting Performance

2011 ◽  
Vol 693 ◽  
pp. 179-184
Author(s):  
Thomas Jarlsmark ◽  
Jan Strömbeck ◽  
Mikael Terner ◽  
Jerry Wilkins
Keyword(s):  
Molten Metal ◽  
Metal Flow ◽  
Casting Process ◽  
Direct Chill ◽  
Level Control ◽  
Level Measurement ◽  
Cost Efficient ◽  
Molten Metal Flow ◽  
Automatic Level ◽  
Rolling Ingot

The ways to gain better quality and higher casting performance is an urgent topic among aluminium producers today. This issue is also often on the agenda at conferences like this and the subjects and technologies to achieve this varies. Controlling the molten metal flow by maintaining predefined levels or level patterns is one of many powerful tools to reach this goal. Precimeter Control specializes in applications for non-ferrous molten metal level measurement and molten metal flow control. By integration, or retrofitting, any new or existing casting line can easily be automatically controlled and gain improved casting performance in a cost efficient way. This paper will focus on the main benefits from automatic level control and how some plants have achieved improvements in their casting process of DC (Direct Chill) slab (or rolling ingot) casting after implementing such technology.

A 25 Gb/s 60 GHz digital power amplifier in 28nm CMOS

2017 ◽  
Author(s):  
Kaushik Dasgupta ◽  
Saeid Daneshgar ◽  
Chintan Thakkar ◽  
Kunal Datta ◽  
James Jaussi ◽  
...  
Keyword(s):  
Power Amplifier ◽  
60 Ghz

A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

2011 ◽  
Vol 21 (6) ◽  
pp. 323-325 ◽  
Author(s):  
Youngmin Kim ◽  
Yumin Koh ◽  
Jihoon Kim ◽  
Seokchul Lee ◽  
Jinho Jeong ◽  
...  
Keyword(s):  
Power Amplifier ◽  
60 Ghz

Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  
Keyword(s):  
Data Transmission ◽  
Intermediate Frequency ◽  
Phase Locked Loop ◽  
Data Rate ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Integrated ◽  
Front End ◽  
Free Data ◽  
Bicmos Technology

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

Sign in / Sign up

Export Citation Format

Share Document