A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

Kazushige Kanda; Noboru Shibata; Toshiki Hisada; Katsuaki Isobe; Manabu Sato; Yui Shimizu; Takahiro Shimizu; Takahiro Sugimoto; Tomohiro Kobayashi; Naoaki Kanagawa; Yasuyuki Kajitani; Takeshi Ogawa; Kiyoaki Iwasa; Masatsugu Kojima; Toshihiro Suzuki; Yuya Suzuki; Shintaro Sakai; Tomofumi Fujimura; Yuko Utsunomiya; Toshifumi Hashimoto; Naoki Kobayashi; Yuuki Matsumoto; Satoshi Inoue; Yoshinao Suzuki; Yasuhiko Honda; Yosuke Kato; Shingo Zaitsu; Hardwell Chibvongodze; Mitsuyuki Watanabe; Hong Ding; Naoki Ookuma; Ryuji Yamashita

doi:10.1109/jssc.2012.2215094

A 19 nm 112.8 mm$^{2}$ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2012.2215094 ◽

2013 ◽

Vol 48 (1) ◽

pp. 159-167 ◽

Cited By ~ 15

Author(s):

Kazushige Kanda ◽

Noboru Shibata ◽

Toshiki Hisada ◽

Katsuaki Isobe ◽

Manabu Sato ◽

...

Keyword(s):

Flash Memory ◽

Multi Level

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Efficient low-complexity two-dimensional equalisation technique for multi-level cell flash memory storage systems

IET Communications ◽

10.1049/iet-com.2017.0440 ◽

2018 ◽

Vol 12 (14) ◽

pp. 1671-1677 ◽

Cited By ~ 1

Author(s):

Reza A. Ashrafi ◽

Ali E. Pusane

Keyword(s):

Flash Memory ◽

Storage Systems ◽

Low Complexity ◽

Memory Storage ◽

Two Dimensional ◽

Multi Level

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Multi-level p-channel flash memory

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) ◽

10.1109/icsict.1998.785921 ◽

2002 ◽

Cited By ~ 2

Author(s):

F.R.-L. Lin ◽

Yen-Sen Wang ◽

C.C.-H. Hsu

Keyword(s):

Flash Memory ◽

Multi Level

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Random telegraph noise on the threshold voltage of multi-level flash memory

Chinese Physics B ◽

10.1088/1674-1056/26/1/018502 ◽

2017 ◽

Vol 26 (1) ◽

pp. 018502 ◽

Cited By ~ 1

Author(s):

Yiming Liao ◽

Xiaoli Ji ◽

Yue Xu ◽

Chengxu Zhang ◽

Qiang Guo ◽

...

Keyword(s):

Threshold Voltage ◽

Flash Memory ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Multi Level

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Convolutional Neural Network (CNN)-based Detection for Multi-Level-Cell NAND Flash Memory

IEEE Communications Letters ◽

10.1109/lcomm.2021.3112908 ◽

2021 ◽

pp. 1-1

Author(s):

Zhifang Shi ◽

Yi Fang ◽

Yingcheng Bu ◽

Guojun Han

Keyword(s):

Neural Network ◽

Convolutional Neural Network ◽

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Multi Level

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Design and Implementation for Multi-level Cell Flash Memory Storage Systems

2010 IEEE 16th International Conference on Embedded and Real-Time Computing Systems and Applications ◽

10.1109/rtcsa.2010.31 ◽

2010 ◽

Cited By ~ 2

Author(s):

Jen-Wei Hsieh ◽

Chung-Hsien Wu ◽

Ge-Ming Chiu

Keyword(s):

Flash Memory ◽

Storage Systems ◽

Memory Storage ◽

Design And Implementation ◽

Multi Level

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Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418389 ◽

2008 ◽

Cited By ~ 1

Author(s):

Yoon Kim ◽

Jang-Gn Yun ◽

Il Han Park ◽

Seongjae Cho ◽

Jung Hoon Lee ◽

...

Keyword(s):

Flash Memory ◽

Vertical Channel ◽

Multi Level

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LDPC coding scheme for improving the reliability of multi-level-cell NAND flash memory in radiation environments

China Communications ◽

10.1109/cc.2017.8014343 ◽

2017 ◽

Vol 14 (8) ◽

pp. 10-21

Author(s):

Guangjun Ge ◽

Liuguo Yin

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Coding Scheme ◽

Multi Level

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Reliability Enhancement for Multi-level Cell NAND Flash Memory Using Error Asymmetry

2019 25th Asia-Pacific Conference on Communications (APCC) ◽

10.1109/apcc47188.2019.9026538 ◽

2019 ◽

Author(s):

Duc-Phuc Nguyen ◽

Khoa Le Trung ◽

Fakhreddine Ghaffari ◽

David Declercq

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Multi Level ◽

Reliability Enhancement

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Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2009.2024154 ◽

2010 ◽

Vol 18 (10) ◽

pp. 1412-1420 ◽

Cited By ~ 38

Author(s):

Shu Li ◽

Tong Zhang

Keyword(s):

Flash Memory ◽

Memory Storage ◽

Nand Flash ◽

Nand Flash Memory ◽

Multi Level

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A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2006.888299 ◽

2007 ◽

Vol 42 (1) ◽

pp. 219-232 ◽

Cited By ~ 51

Author(s):

Ken Takeuchi ◽

Yasushi Kameda ◽

Susumu Fujimura ◽

Hiroyuki Otake ◽

Koji Hosono ◽

...

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Multi Level

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