Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. Two types of the most advanced commercial trench products, which are the asymmetric trench SiC MOSFET and the double-trench SiC MOSFET, are chosen as the targeted devices. The discrepant degradation trends caused by the repetitive avalanche stress are monitored. For the double-trench device, the conduction characteristic improves while the gate-drain capacitance (Cgd) increases seriously. It is because positive charges are injected into the bottom gate oxide during the avalanche process, which are driven by the high oxide electronic field (Eox) and the high impact ionization rate (I.I.) there. Meanwhile, for the asymmetric trench SiC MOSFET, the I–V curve under the high gate bias condition and the Cgd remain relatively stable, while the trench bottom is well protected by the deep P+ well. However, it’s threshold voltage (Vth) decreases more obviously when compared with that of the double-trench device and the inclined channel suffers from more serious stress than the vertical channel. Positive charges are more easily injected into the inclined channel. The phenomena and the corresponding mechanisms are analyzed and proved by experiments and technology computer-aided design (TCAD) simulations.

The investigation of the average diameter of the SiO2 nanoparticles effect on the oil displacing efficiency from the pore in the rock formation using nanosuspension as a displacing agent

The numerical investigation of the nanofluid flow, which displaced the oil, in a microchannel was carried out. The effect of the average diameter of the SiO2 nanoparticles on the oil displacing efficiency by nanofluids for different sizes of microchannel at various Reynolds numbers was studied. A T-shaped microchannel with a vertical channel, called a pore channel, which imitated the pore in the rock formation was considered as a computational domain. The main flow channel width and height were 200 µm. The width and height of the pore channel were varied in the range from 100 µm to 800 µm. The Reynolds number varied from 0.1 to 100. The oil recovery coefficient, which is defined as the ratio of the displacing volume of oil from the pore to the volume of the pore was considered as the main studied characteristic. The nanofluid is considered a single-phase fluid with experimentally obtained properties. The mass concentration of SiO2 nanoparticles was 0.5%. The average diameters of nanoparticles were 5 nm, 18 nm, and 50 nm. It was found, that the oil recovery coefficient increased with a decrease in the average diameter of nanoparticles. It was obtained that the nanofluid can enhance the oil recovery several times compared to pure water.