A 65-nm CMOS $I/Q$ RF Power DAC With 24- to 42-dB Third-Harmonic Cancellation and Up to 18-dB Mixed-Signal Filtering

2018 ◽  
Vol 53 (4) ◽  
pp. 1127-1138 ◽  
Author(s):  
Bonjern Yang ◽  
Eric Y. Chang ◽  
Ali M. Niknejad ◽  
Borivoje Nikolic ◽  
Elad Alon
Author(s):  
Firas M. Ali ◽  
Mahmuod H. Al-Muifraje ◽  
Thamir R. Saeed

Abstract Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that extends the operating bandwidth of the conventional class-B power amplifier. However, the maximum theoretical efficiency is limited to that of the class-B power amplifier. In this paper, an enhanced mode of operation for the class-J power amplifier is proposed by incorporating a third harmonic voltage component to produce an optimum waveform for maximizing the fundamental voltage component and thereby to increase the drain efficiency and introduce a new design space. A detailed derivation for the necessary relations of output power, drain efficiency, and the required harmonic load impedances is provided, showing a significant improvement in theoretical maximum efficiency from 78.5 to 89.8%. In order to confirm the developed analytic approach, a 10 W prototype amplifier model was designed and fabricated to operate within the global system for mobile communications (GSM) frequency band 850–950 MHz using a commercial GaN power high electron mobility transistor (HEMT). The experimental results have indicated that the drain efficiency of the circuit varies from 68 to 80% within the desired band.


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