Effect of nitrogen on the band structure and material gain of In/sub y/Ga/sub 1-y/As/sub 1-x/N/sub x/-GaAs quantum wells

2003 ◽  
Vol 9 (3) ◽  
pp. 716-722 ◽  
Author(s):  
J.M. Ulloa ◽  
J.L. Sanchez-Rojas ◽  
A. Hierro ◽  
J.M.G. Tijero ◽  
E. Tournie
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Material Gain

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

scholarly journals HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

2019 ◽  
Vol 45 (4) ◽  
pp. 412-418 ◽  
Author(s):  
S. V. Gudina ◽  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
S. M. Podgornykh ◽  
M. R. Popov ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Large Scale ◽  
Quantum Hall ◽  
Impurity Potential
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