scholarly journals Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

2014 ◽  
Vol 20 (4) ◽  
pp. 394-404 ◽  
Author(s):  
Gunther Roelkens ◽  
Utsav Dave ◽  
Alban Gassenq ◽  
Nannicha Hattasan ◽  
Chen Hu ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Photonic Integration ◽  
Telecommunication Wavelength ◽  
Silicon Based

Polarizability of Metal Nanoparticles in the Telecommunication Wavelength Range

2020 ◽  
Vol 46 (6) ◽  
pp. 548-550
Author(s):  
A. I. Sidorov ◽  
A. I. Sivak ◽  
N. V. Vakula
Keyword(s):  
Metal Nanoparticles ◽  
Wavelength Range ◽  
Telecommunication Wavelength

Corrections to “Silicon-Based 2-D Slab Photonic Crystal TM Polarizer at Telecommunication Wavelength” [15 Apr 08 641-643]

2008 ◽  
Vol 20 (14) ◽  
pp. 1276-1276 ◽  
Author(s):  
Yonghao Cui ◽  
Qi Wu ◽  
Ethan Schonbrun ◽  
Mark Tinker ◽  
J.-B. Lee ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Telecommunication Wavelength ◽  
Silicon Based

Nanocrystal-based microcavity light-emitting devices operating in the telecommunication wavelength range

2005 ◽  
Vol 86 (24) ◽  
pp. 241104 ◽  
Author(s):  
J. Roither ◽  
M. V. Kovalenko ◽  
S. Pichler ◽  
T. Schwarzl ◽  
W. Heiss
Keyword(s):  
Wavelength Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Telecommunication Wavelength

scholarly journals Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

2018 ◽  
Vol 8 (9) ◽  
pp. 1552 ◽  
Author(s):  
Youngsoo Kim ◽  
Young Lee ◽  
Seokhyeon Hong ◽  
Kihwan Moon ◽  
Soon-Hong Kwon
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Quality Factor ◽  
Wavelength Region ◽  
High Quality Factor ◽  
Silica Layer ◽  
High Quality ◽  
Light Emitting ◽  
Telecommunication Wavelength ◽  
Silicon Based

The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region.

Integration of Mid-Infrared Light Sources on Silicon-Based Waveguide Platforms in 3.5–4.7 μm Wavelength Range

2019 ◽  
Vol 25 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Aditya Malik ◽  
Alexander Spott ◽  
Eric J. Stanton ◽  
Jonathan D. Peters ◽  
Jeremy Daniel Kirch ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared ◽  
Silicon Based

Silicon-Based 2-D Slab Photonic Crystal TM Polarizer at Telecommunication Wavelength

2008 ◽  
Vol 20 (8) ◽  
pp. 641-643 ◽  
Author(s):  
Yonghao Cui ◽  
Qi Wu ◽  
Ethan Schonbrun ◽  
Mark Tinker ◽  
J.-B. Lee ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Telecommunication Wavelength ◽  
Silicon Based

Nonlinear optical properties of an organic film formed of dye aggregates with absorption in the telecommunication wavelength range

2004 ◽  
Vol 84 (9) ◽  
pp. 1450-1452 ◽  
Author(s):  
Satoshi Tatsuura ◽  
Minquan Tian ◽  
Makoto Furuki ◽  
Yasuhiro Sato ◽  
Izumi Iwasa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Wavelength Range ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
Organic Film ◽  
Telecommunication Wavelength

scholarly journals Silicon-based silicon–germanium–tin heterostructure photonics

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130113 ◽  
Author(s):  
Richard Soref
Keyword(s):  
Integrated Circuits ◽  
Wavelength Range ◽  
Silicon Germanium ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Optical Amplifiers ◽  
Laser Diodes ◽  
Light Emitting ◽  
Active Devices ◽  
Silicon Based

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.

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