Gate-dielectric permitivity and metal-gate work-function tradeoff in L/sub met/=25nm PDSOI device characteristics

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A. Bryant ◽  
Xinlin Wang ◽  
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X.P. Wang ◽  
Ming-Fu Li ◽  
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Tom Schram ◽  
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Vol 80 ◽  
pp. 280-283 ◽  
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G. Sjöblom ◽  
L. Pantisano ◽  
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