Work Function Tuning in Hydrothermally Synthesized Vanadium-Doped MoO3 and Co3O4 Mesostructures for Energy Conversion Devices

The wide interest in developing green energy technologies stimulates the scientific community to seek, for devices, new substitute material platforms with a low environmental impact, ease of production and processing and long-term stability. The synthesis of metal oxide (MO) semiconductors fulfils these requirements and efforts are addressed towards optimizing their functional properties through the improvement of charge mobility or energy level alignment. Two MOs have rising perspectives for application in light harvesting devices, mainly for the role of charge selective layers but also as light absorbers, namely MoO3 (an electron blocking layer) and Co3O4 (a small band gap semiconductor). The need to achieve better charge transport has prompted us to explore strategies for the doping of MoO3 and Co3O4 with vanadium (V) ions that, when combined with oxygen in V2O5, produce a high work function MO. We report on subcritical hydrothermal synthesis of V-doped mesostructures of MoO3 and of Co3O4, in which a tight control of the doping is exerted by tuning the relative amounts of reactants. We accomplished a full analytical characterization of these V-doped MOs that unambiguously demonstrates the incorporation of the vanadium ions in the host material, as well as the effects on the optical properties and work function. We foresee a promising future use of these materials as charge selective materials in energy devices based on multilayer structures.

Alkaline earth atom doping-induced changes in the electronic and magnetic properties of graphene: a density functional theory study

Alkaline earth atom dopants on graphene induce work function tuning and spin polarized electronic properties by ionic bonding.

Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment

Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc’s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.

Customizing the reduction of individual graphene oxide flakes for precise work function tuning with meV precision

Laser-controlled reduction of individual graphene oxide films provide unprecedented work function tuning with millivolt precision.