Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

2010 ◽  
Vol 31 (5) ◽  
pp. 437-439 ◽  
Author(s):  
Yu-Lun Lu ◽  
Fu-Kuo Hsueh ◽  
Kuo-Ching Huang ◽  
Tz-Yen Cheng ◽  
Jeff M Kowalski ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Gate Electrode ◽  
Dopant Activation

The detection of polyamines by an extended gate-type organic transistor functionalized with a carboxylate attached 1,3,4-thiadiazole derivative

2021 ◽  
Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Recognition ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Organic Transistor ◽  
Thiadiazole Derivative

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...

Study on Light Induced Leakage Current Related to Amorphous Silicon TFT Design

2007 ◽  
Vol 124-126 ◽  
pp. 259-262
Author(s):  
Jae Hong Jeon ◽  
Kang Woong Lee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Gate Electrode ◽  
Silicon Thin Film ◽  
Pattern Design ◽  
Conventional Design ◽  
The One

We investigated the effect of amorphous silicon pattern design regarding to light induced leakage current in amorphous silicon thin film transistor. In addition to conventional design, where amorphous silicon layer is protruding outside the gate electrode, we designed and fabricated amorphous silicon thin film transistors in another two types of bottom gated structure. The one is that the amorphous silicon layer is located completely inside the gate electrode and the other is that the amorphous silicon layer is protruding outside the gate electrode but covered completely by the source and drain electrode. Measurement of the light induced leakage current caused by backlight revealed that the design where the amorphous silicon is located inside the gate electrode was the most effective however the last design was also effective in reducing the leakage current about one order lower than that of the conventional design.

scholarly journals A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)

2007 ◽  
Vol 28 (1) ◽  
pp. 39-41 ◽  
Author(s):  
Kow Ming Chang ◽  
Gin Min Lin ◽  
Cheng Guo Chen ◽  
Mon Fan Hsieh
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor

3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

ETRI Journal ◽  
2008 ◽  
Vol 30 (2) ◽  
pp. 308-314 ◽  
Author(s):  
Yong-Hae Kim ◽  
Choong-Heui Chung ◽  
Jaehyun Moon ◽  
Su-Jae Lee ◽  
Gi Heon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Silicon Thin Film

Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

1996 ◽  
Vol 17 (6) ◽  
pp. 258-260 ◽  
Author(s):  
Kyung Ha Lee ◽  
Young Min Jhon ◽  
Hyuk Jin Cha ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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