Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors

2016 ◽  
Vol 37 (12) ◽  
pp. 1570-1573 ◽  
Author(s):  
Chan-Yong Jeong ◽  
Hee-Joong Kim ◽  
Dae-Hwan Kim ◽  
Hyun-Suk Kim ◽  
Tae Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
High Mobility ◽  
Carrier Transport Mechanism

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

Ion mediated charge carrier transport in a novel radiation sensitive polyoxometalate–polymer hybrid

RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44838-44842 ◽  
Author(s):  
Abdus Salam Sarkar ◽  
Vishwanath Kalyani ◽  
Kenneth E. Gonsalves ◽  
Chullikkattil P. Pradeep ◽  
Suman Kalyan Pal
Keyword(s):  
Transition Metal ◽  
Charge Carrier ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Carrier Transport Mechanism ◽  
Polymer Hybrid

We elucidate the carrier transport mechanism in a novel polyoxometalate–polymer (POM–MAPDST) hybrid containing molybdenum transition metal.

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