1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

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Contact Effects in High Mobility Microcrystalline Silicon Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-0989-a11-03 ◽

2007 ◽

Vol 989 ◽

Cited By ~ 2

Author(s):

Kah Yoong Chan ◽

Eerke Bunte ◽

Helmut Stiebig ◽

Dietmar Knipp

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Channel Length ◽

Microcrystalline Silicon ◽

Silicon Thin Film ◽

Short Channel ◽

Long Channel

AbstractMicrocrystalline silicon (mc-Si:H) has recently been proven to be a promising material for thin-film transistors (TFTs). We present mc-Si:H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200°C in a condition similar to the fabrication of amorphous silicon TFTs. The mc-Si:H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5V. Such high mobilities are observed for long channel devices (50-200 mm). For short channel device (2 mm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contacts.

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Short-channel, high-mobility organic thin-film transistors with alkylated dinaphthothienothiophene

physica status solidi (c) ◽

10.1002/pssc.201300245 ◽

2013 ◽

Vol 10 (11) ◽

pp. 1632-1635 ◽

Cited By ~ 12

Author(s):

Masatoshi Kitamura ◽

Yasutaka Kuzumoto ◽

Yasuhiko Arakawa

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Mobility ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Short Channel

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Thermal Stability of Short Channel, High-Mobility Organic Thin-Film Transistors having Bottom-Contact Configuration

10.7567/ssdm.2013.ps-10-3 ◽

2013 ◽

Author(s):

M. Kitamura ◽

Y. Arakawa

Keyword(s):

Thin Film ◽

Thermal Stability ◽

Thin Film Transistors ◽

High Mobility ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Short Channel ◽

Bottom Contact ◽

Contact Configuration ◽

Thermal Stability Of

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Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4981930 ◽

2017 ◽

Vol 35 (3) ◽

pp. 032401

Author(s):

Juhyun Bae ◽

Kyohyeok Kim ◽

Namyong Kwon ◽

Ilsub Chung

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Short Channel ◽

Ink Jet Printing ◽

Ink Jet ◽

Jet Printing

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High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

MRS Proceedings ◽

10.1557/opl.2011.721 ◽

2011 ◽

Vol 1315 ◽

Cited By ~ 1

Author(s):

D. K. Ngwashi ◽

R. B. M. Cross ◽

S. Paul ◽

Andrian P. Milanov ◽

Anjana Devi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Metrics ◽

Chemical Vapour ◽

High Mobility ◽

Hafnium Dioxide ◽

Organic Chemical ◽

Channel Mobility ◽

High K ◽

Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

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