High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

scholarly journals Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

2015 ◽  
Vol 33 (4) ◽  
pp. 725-731 ◽  
Author(s):  
K.O. Oyedotun ◽  
E. Ajenifuja ◽  
B. Olofinjana ◽  
B.A. Taleatu ◽  
E. Omotoso ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Lithium Manganese Oxide ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Manganese ◽  
Metal Organic

AbstractLithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2) and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T) in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

MOCVD of Bi2Te3 and Sb2Te3 on GaAs Substrates for Thin-Film Thermoelectric Applications

2006 ◽  
Vol 6 (11) ◽  
pp. 3325-3328 ◽  
Author(s):  
Jeong-Hun Kim ◽  
Yong-Chul Jung ◽  
Sang-Hee Suh ◽  
Jin-Sang Kim
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Deposition Temperature ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Thermoelectric Device ◽  
Organic Chemical ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Surface Morphologies

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of −160 μVK−1 for Bi2Te3 and + 110 μVK−1 for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

MOCVD of CuInE2 (Where E = S or Se) and Related Materials for Solar Cell Devices

1999 ◽  
Vol 606 ◽  
Author(s):  
Michael Kemmler ◽  
Michael Lazell ◽  
Paul O'brien ◽  
David J. Otwaya
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

2006 ◽  
Vol 46 ◽  
pp. 21-26
Author(s):  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Salvatore Lombardo ◽  
Roberta G. Toro ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Dielectric Breakdown ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Dielectric Thin Films ◽  
Conduction Mechanisms ◽  
Deposition Parameters ◽  
High K ◽  
Metal Organic

Praseodymium based dielectric thin films have been deposited by Metal-Organic Chemical Vapour Deposition (MOCVD). Special emphasis has been placed upon deposition parameters crucial to obtain Pr2O3 phase and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium containing films. The breakdown (BD) characteristics of Pr2O3 films have been investigated by an innovative and handling approach based on C-AFM. Moreover, the BD kinetics have been elucidated considering the role of defects in the conduction mechanisms.

Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics

2006 ◽  
Vol 88 (24) ◽  
pp. 243513 ◽  
Author(s):  
D. K. Hwang ◽  
Kimoon Lee ◽  
Jae Hoon Kim ◽  
Seongil Im ◽  
Chang Su Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Double Gate ◽  
High K

ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics

2004 ◽  
Vol 109 (1-3) ◽  
pp. 104-112 ◽  
Author(s):  
G Padeletti ◽  
A Cusmà ◽  
M Viticoli ◽  
G.M Ingo ◽  
A Mezzi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
High K ◽  
Metal Organic
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