2015 IEEE International Electron Devices Meeting (IEDM)

Moore's law at 50: Are we planning for retirement?

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409607 ◽

2015 ◽

Cited By ~ 14

Author(s):

Greg Yeric

Keyword(s):

Moore’S Law ◽

Moore's Law

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High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409638 ◽

2015 ◽

Cited By ~ 7

Author(s):

Yao-Jen Lee ◽

Ta-Chun Cho ◽

Po-Jung Sung ◽

Kuo-Hsing Kao ◽

Fu-Kuo Hsueh ◽

...

Keyword(s):

Co2 Laser ◽

High Performance ◽

Laser Annealing ◽

Junctionless Transistors

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409703 ◽

2015 ◽

Cited By ~ 2

Author(s):

Y. Morita ◽

T. Maeda ◽

H. Ota ◽

W. Mizubayashi ◽

S. O'uchi ◽

...

Keyword(s):

Layer By Layer ◽

Line Edge Roughness ◽

Surface Flattening ◽

Wafer Scale ◽

Uniform Layer ◽

Edge Roughness

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Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409804 ◽

2015 ◽

Cited By ~ 1

Author(s):

S. Imura ◽

K. Kikuchi ◽

K. Miyakawa ◽

H. Ohtake ◽

M. Kubota ◽

...

Keyword(s):

Image Sensor ◽

Size Controlled

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High frequency high breakdown voltage GaN transistors

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409660 ◽

2015 ◽

Cited By ~ 3

Author(s):

F. Medjdoub ◽

N. Herbecq ◽

A. Linge ◽

M. Zegaoui

Keyword(s):

Breakdown Voltage ◽

High Frequency ◽

High Breakdown Voltage

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Oxide based nanoscale analog synapse device for neural signal recognition system

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409628 ◽

2015 ◽

Cited By ~ 15

Author(s):

Daeseok Lee ◽

Jaesung Park ◽

Kibong Moon ◽

Junwoo Jang ◽

Sangsu Park ◽

...

Keyword(s):

Recognition System ◽

Signal Recognition ◽

Neural Signal

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High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409710 ◽

2015 ◽

Cited By ~ 2

Author(s):

H. W. Then ◽

L. A. Chow ◽

S. Dasgupta ◽

S. Gardner ◽

M. Radosavljevic ◽

...

Keyword(s):

Power Electronics ◽

Gate Dielectric ◽

Enhancement Mode ◽

High K ◽

Rf Applications ◽

High K Gate Dielectric

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GaNFET compact model for linking device physics, high voltage circuit design and technology optimization

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409664 ◽

2015 ◽

Cited By ~ 5

Author(s):

Ujwal Radhakrishna ◽

Seungbum Lim ◽

Pilsoon Choi ◽

Tomas Palacios ◽

Dimitri Antoniadis

Keyword(s):

Circuit Design ◽

High Voltage ◽

Compact Model ◽

Design And Technology ◽

Device Physics

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A new surface potential based physical compact model for GFET in RF applications

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409788 ◽

2015 ◽

Cited By ~ 3

Author(s):

Lingfei Wang ◽

Songang Peng ◽

Zhiwei Zong ◽

Ling Li ◽

Wei Wang ◽

...

Keyword(s):

Surface Potential ◽

Compact Model ◽

Rf Applications

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2015 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Moore's law at 50: Are we planning for retirement?

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles

High frequency high breakdown voltage GaN transistors

Oxide based nanoscale analog synapse device for neural signal recognition system

High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications

GaNFET compact model for linking device physics, high voltage circuit design and technology optimization

A new surface potential based physical compact model for GFET in RF applications

Export Citation Format

2015 IEEE International Electron Devices Meeting (IEDM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Moore's law at 50: Are we planning for retirement?

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles

High frequency high breakdown voltage GaN transistors

Oxide based nanoscale analog synapse device for neural signal recognition system

High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications

GaNFET compact model for linking device physics, high voltage circuit design and technology optimization

A new surface potential based physical compact model for GFET in RF applications

2015 IEEE International Electron Devices Meeting (IEDM)
Latest Publications