Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

2002 ◽  
Author(s):  
R. Mottahedeh ◽  
S.K. Haywood ◽  
D.A. Pattison ◽  
P.N. Kean ◽  
I. Bennion ◽  
...  
Keyword(s):  
Absorption Saturation ◽  
Excitonic Absorption

Excitonic absorption saturation in ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures

1991 ◽  
Vol 59 (12) ◽  
pp. 1497-1499 ◽  
Author(s):  
M. Dabbicco ◽  
R. Cingolani ◽  
M. Ferrara ◽  
K. Ploog ◽  
A. Fisher
Keyword(s):  
Quantum Well ◽  
Ternary Alloy ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Absorption Saturation ◽  
Excitonic Absorption

Fractional-dimensional excitonic absorption theory applied toV-groove quantum wires

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
K. F. Karlsson ◽  
M.-A. Dupertuis ◽  
H. Weman ◽  
E. Kapon
Keyword(s):  
Quantum Wires ◽  
Excitonic Absorption ◽  
Absorption Theory

scholarly journals Moiré Angle Dependent Excitonic Absorption in Twisted Bilayer WSe2 by EELS

2021 ◽  
Vol 27 (S1) ◽  
pp. 122-123
Author(s):  
Steffi Woo ◽  
Robert Schneider ◽  
Johann Preuß ◽  
Ashish Arora ◽  
Benjamin Carey ◽  
...  
Keyword(s):  
Excitonic Absorption

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 μm

1972 ◽  
Vol 21 (8) ◽  
pp. 356-357 ◽  
Author(s):  
A.F. Gibson ◽  
C.A. Rosito ◽  
C.A. Raffo ◽  
M.F. Kimmitt
Keyword(s):  
Gallium Arsenide ◽  
Absorption Saturation ◽  
Germanium Silicon

Laser and absorption saturation measurements of Cr4+ crystals, pumped by broadband pulsed 940 nm radiation

1997 ◽  
Vol 29 (7) ◽  
pp. 407-410 ◽  
Author(s):  
V.V. Ter-Mikirtychev ◽  
I.T. McKinnie ◽  
D.M. Warrington ◽  
Y. Kalisky ◽  
S.A. Pollack
Keyword(s):  
Absorption Saturation
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