Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Modelling of Electrical Conductivity of n-p Ceramic Composite Using Equivalent Circuits

1995 ◽  
Vol 411 ◽  
Author(s):  
Gyeong Man Choi ◽  
Seok Taek Jun
Keyword(s):  
Electrical Conductivity ◽  
Grain Size ◽  
Ceramic Composite ◽  
Composition Dependence ◽  
Equivalent Circuits ◽  
Total Conductivity ◽  
Fractional Change ◽  
Total Electrical Conductivity ◽  
Type Semiconductor ◽  
P Type

ABSTRACTComposition dependence of electrical conductivity of ceramic composite was analyzed using a ZnO(n-type semiconductor)-CuO(p-type semiconductor) composite as a model. The contributions from grain and grain boundaries to the total conductivity of the composite were determined. New equivalent circuits were proposed which represented the distribution and connection of n and p grains and the total electrical conductivity was analyzed using the proposed circuits. Dominant equivalent circuit changed with composition and the total conductivity was determined by the exponential fractional change of two equivalent circuits. Effect of grain size on the grain boundary and total conductivity were also examined.

Layered CuI: a path to 2D p-type transparent conducting materials

2021 ◽  
Author(s):  
Michael Seifert ◽  
Moemi Kawashima ◽  
Claudia Rödl ◽  
Silvana Botti
Keyword(s):  
Spectral Range ◽  
Visible Spectral Range ◽  
Promising Material ◽  
Transparent Electronics ◽  
Copper Iodide ◽  
Transparent Conducting ◽  
Conducting Materials ◽  
Type Semiconductor ◽  
Transparent Conducting Materials ◽  
P Type

Zincblende copper iodide, a p-type semiconductor that is transparent in the visible spectral range, has attracted growing attention as a promising material for transparent electronics. While the zincblende γ-phase is...

Highly Doped P-Type and N-Type ZnS, ZnSe, CdS and CdSe Thin Films Growth by Pulsed Laser Deposition

1994 ◽  
Vol 340 ◽  
Author(s):  
Wenpin P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Gaas Substrates ◽  
P Type

ABSTRACTZnS, ZnSe, CdS and CdSe thin films were grown on InP or GaAs substrates with high ptype and n-type doping concentrations by pulsed excimer laser deposition without any postannealing processing. The x-ray diffraction results showed that these thin films were fully epitaxial (in-plane aligned). These high quality films are suitable for use as optoelectronic devices which will operate in the visible region of the spectrum.

Synergistic effect by Na doping and S substitution for high thermoelectric performance of p-type MnTe

2017 ◽  
Vol 5 (21) ◽  
pp. 5076-5082 ◽  
Author(s):  
Yangyang Ren ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Dan Zhang ◽  
Zhiwei Zhou ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Synergistic Effect ◽  
Band Gap ◽  
Room Temperature ◽  
Hole Concentration ◽  
Direct Band Gap ◽  
Na Doping ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Pristine MnTe is a p-type semiconductor with a relatively low hole concentration of 1018 cm−3, low electrical conductivity, and thus poor TE performance at room temperature owing to the broad direct band gap of 1.27 eV.

scholarly journals Fabrication of Cu2O Nanostructured Thin Film by Anodizing

2018 ◽  
Vol 36 (2) ◽  
pp. 209-216 ◽  
Author(s):  
C.H. Voon ◽  
B.Y. Lim ◽  
S.C.B. Gopinath ◽  
Y. Al-Douri ◽  
K.L. Foo ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Region ◽  
X Ray Diffraction ◽  
Nanostructured Thin Film ◽  
Narrow Bandgap ◽  
Type Semiconductor ◽  
High Absorption Coefficient ◽  
P Type ◽  
O Phase ◽  
High Absorption

Abstract Cuprous oxide, a narrow bandgap p-type semiconductor, has been known as a potential material for applications in supercapacitors, hydrogen production, sensors, and energy conversion due to its properties such as non-toxicity, easy availability, cost effectiveness, high absorption coefficient in the visible region and large minority carriers diffusion length. In this study, Cu2O nanostructured thin film was fabricated by anodizing of Cu plates in ethylene glycol containing 0.15 M KOH, 0.1 M NH4F and 3 wt.% deionized water. The effects of anodizing voltage and temperature of electrolyte were investigated and reported. It was found that nanoporous Cu2O thin film was formed when anodizing voltages of 50 V and 70 V were used while a dense Cu2O thin film was formed due to the aggregation of smaller nanoparticles when 30 V anodizing voltage was used. Nanoplatelets thin film was formed when the temperature of electrolyte was reduced to 15 °C and 5 °C. X-ray diffraction confirmed the presence of Cu2O phase in thin film formed during anodizing of Cu plates, regardless of the anodizing voltage and temperature of electrolyte. Photoluminescence spectroscopy showed the presence of Cu2O peak at 630 nm corresponding to band gap of 1.97 eV. A mechanism of the formation of Cu2O thin film was proposed. This study reported the ease of tailoring Cu2O nanostructures of different morphologies using anodizing that may help widen the applications of this material

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators

2016 ◽  
Vol 45 (10) ◽  
pp. 5253-5263 ◽  
Author(s):  
A. Arab ◽  
A. V. Davydov ◽  
D. A. Papaconstantopoulos ◽  
Q. Li
Keyword(s):  
Promising Material ◽  
Thermoelectric Generators ◽  
Monolayer Mos2 ◽  
P Type
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