Tunable sampled-grating DBR lasers using quantum-well intermixing

2002 ◽  
Vol 14 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
E.J. Skogen ◽  
J.S. Barton ◽  
S.P. DenBaars ◽  
L.A. Coldren
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Sampled Grating ◽  
Dbr Lasers

On Tuning Efficiency of Sampled Grating DBR Lasers using Quantum Well Intermixing

2002 ◽  
Author(s):  
Erik J. Skogen ◽  
Jonathon S. Barton ◽  
Steven P. DenBaars ◽  
Larry A. CoIdren
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Sampled Grating ◽  
Dbr Lasers

Quantum Well Intermixing Using Sputtered Silica for Photonic Integrated Circuits Operating Around 1550 nm

1999 ◽  
Vol 607 ◽  
Author(s):  
John H. Marsh ◽  
A. Catrina Bryce ◽  
Olek P. Kowalski ◽  
Stewart D. McDougall ◽  
Maolong Ke ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
Quantum Wells ◽  
Ridge Waveguide ◽  
Field Pattern ◽  
Free Carrier Absorption ◽  
Low Loss ◽  
Quantum Well Intermixing ◽  
Dbr Lasers ◽  
Etched Surface

AbstractA novel technique for quantum-well intermixing has been developed using sputtered silica. The technique relies on the generation of point defects via plasma induced damage during the deposition of the sputtered silica. The presence of the defects before annealing allows the intermixing to take place at lower annealing temperatures (>200 C) than those needed for conventional impurity free vacancy disordering. The low annealing temperature has allowed the technique to be applied to InP based quantum well systems such as InGaAs/InGaAsP and InGaAs/InGaAlAs, and provides a simple and reliable process for the fabrication of both wavelength tuned lasers and monolithically integrated devices operating around 1550 nm.Wavelength tuned broad area oxide stripe lasers have been demonstrated in InGaAs-InAlGaAs and InGaAs-InGaAsP quantum wells. Oxide stripe lasers with integrated intermixed slab waveguides have enabled the production of a narrow (3 degrees), single lobed far field pattern in InGaAs-InAlGaAs devices. Extended cavity ridge waveguide lasers operating around 1550 nm have been demonstrated with low loss (alpha = 4.1/cm) waveguides, the loss beinglimited by free carrier absorption in the waveguide cladding layers. Ridge waveguide, deeply etched surface grating DBR lasers were fabricated both with and without intermixing the grating section. Measurements show that a significant improvement in performance is obtained from the DBR lasers when the grating section is intermixed.The intermixing technique has been further developed in order to realise 3 bandgaps on a chip in a single annealing step for the integration of amplifiers, passive waveguides and bandgap tuned electro-absorption modulators. Modulation depths of 25 dB were measured from the modulators.The results illustrate that the technique can routinely be used to fabricate low-loss optical interconnects and bandgap tuned devices, offering a very promising route toward photonic integration.

scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1783-1790 ◽  
Author(s):  
Gregory B. Tait ◽  
David B. Ameen
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

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