Enhancement of Light Extraction Efficiency of Gallium Nitride Flip-Chip Light-Emitting Diode With Silicon Oxide Hemispherical Microlens on its Back

2008 ◽  
Vol 20 (15) ◽  
pp. 1293-1295 ◽  
Author(s):  
Ming-Kwei Lee ◽  
Chen-Lin Ho ◽  
Cho-Han Fan
Keyword(s):  
Gallium Nitride ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Silicon Oxide ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting

scholarly journals Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Current Densities

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

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