Improving Light Extraction Efficiency of (AlxGa1-x)0.5In0.5P-Based Flip-Chip Light-Emitting Diode with a Geometric Sapphire Shaping Structure

2008 ◽  
Author(s):  
Y. C. Lee ◽  
C. E. Lee ◽  
H. C. Kuo ◽  
T. C. Lu ◽  
S. C. Wang
Keyword(s):  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting

scholarly journals Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Current Densities

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

scholarly journals Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 319 ◽  
Author(s):  
Bin Tang ◽  
Jia Miao ◽  
Yingce Liu ◽  
Hui Wan ◽  
Ning Li ◽  
...  
Keyword(s):  
Total Internal Reflection ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Output ◽  
Cost Effective ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Output Power ◽  
Light Emitting ◽  
Air Interface

Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (LEDs) mainly focus on relieving the total internal reflection at sapphire/air interface, but such methods hardly affect the epilayer mode photons. We demonstrated that the prism-structured sidewall based on tetramethylammonium hydroxide (TMAH) etching is a cost-effective solution for promoting light extraction efficiency of flip-chip mini-LEDs. The anisotropic TMAH etching created hierarchical prism structure on sidewall of mini-LEDs for coupling out photons into air without deteriorating the electrical property. Prism-structured sidewall effectively improved light output power of mini-LEDs by 10.3%, owing to the scattering out of waveguided light trapped in the gallium nitride (GaN) epilayer.

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